MT28C128564W18EBW-F706P706KTTWT datasheet, PDF

MT28C128564W18EBW-F706P706KTTWT: DescriptionMemory Circuit, 4MX16, CMOS, PBGA77, LEAD FREE, FBGA-77; Categorystorage storage; File Size203KB，15 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/

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MT28C128564W18EBW-F706P706KTTWT Overview

Memory Circuit, 4MX16, CMOS, PBGA77, LEAD FREE, FBGA-77

Parameter Name	Attribute value
Maker	Micron Technology
Parts packaging code	BGA
package instruction	LFBGA,
Contacts	77
Reach Compliance Code	unknown
Other features	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH
JESD-30 code	R-PBGA-B77
JESD-609 code	e1
length	10 mm
memory density	67108864 bit
Memory IC Type	MEMORY CIRCUIT
memory width	16
Number of functions	1
Number of terminals	77
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	4MX16
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
Certification status	Not Qualified
Maximum seat height	1.4 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	TIN SILVER COPPER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
width	8 mm

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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