HN4C06J-GR datasheet, PDF - EEWORLD Datasheet

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HN4C06J-GR: DescriptionTRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size338KB，4 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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HN4C06J-GR Overview

TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal

HN4C06J-GR Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G5
Contacts	5
Reach Compliance Code	unknown
Other features	LOW NOISE
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	120 V
Configuration	COMMON EMITTER, 2 ELEMENTS
Minimum DC current gain (hFE)	200
JESD-30 code	R-PDSO-G5
Number of components	2
Number of terminals	5
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power consumption environment	0.3 W
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.3 V

HN4C06J-GR Related Products

	HN4C06J-GR	HN4C06J-BL(TE85L,F	HN4C06J-GR(TE85L,F	HN4C06JGR	HN4C06J-BL	HN4C06JBL
Description	TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal	TRANS 2 NPN 120V 100MA SC74A	Small Signal Bipolar Transistor	TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal
Maker	Toshiba Semiconductor	-	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G5	-	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5
Contacts	5	-	-	5	5	5
Reach Compliance Code	unknown	-	unknown	unknown	unknown	unknown
Other features	LOW NOISE	-	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.1 A	-	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	120 V	-	120 V	120 V	120 V	120 V
Configuration	COMMON EMITTER, 2 ELEMENTS	-	COMMON EMITTER, 2 ELEMENTS	COMMON EMITTER, 2 ELEMENTS	COMMON EMITTER, 2 ELEMENTS	COMMON EMITTER, 2 ELEMENTS
Minimum DC current gain (hFE)	200	-	200	200	350	350
JESD-30 code	R-PDSO-G5	-	R-PDSO-G5	R-PDSO-G5	R-PDSO-G5	R-PDSO-G5
Number of components	2	-	2	2	2	2
Number of terminals	5	-	5	5	5	5
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	-	NPN	NPN	NPN	NPN
Maximum power consumption environment	0.3 W	-	0.3 W	0.3 W	0.3 W	0.3 W
Maximum power dissipation(Abs)	0.3 W	-	0.3 W	0.3 W	0.3 W	0.3 W
Certification status	Not Qualified	-	-	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	-	YES	YES	YES	YES
Terminal form	GULL WING	-	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	-	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	-	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	-	100 MHz	100 MHz	100 MHz	100 MHz
VCEsat-Max	0.3 V	-	0.3 V	0.3 V	0.3 V	0.3 V

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