BSP316PH6327 datasheet, PDF - EEWORLD Datasheet

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BSP316PH6327: DescriptionPower Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOT223-4-1, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size81KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSP316PH6327 Overview

Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOT223-4-1, 4 PIN

BSP316PH6327 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	SOT-223
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	0.68 A
Maximum drain-source on-resistance	1.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	2.72 A
Guideline	AEC-Q101
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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Preliminary data

BSP 316 P

SIPMOS



Small-Signal-Transistor

Feature

•

P-Channel

•

Enhancement mode

•

Logic Level

•

dv/dt rated

Product Summary

DS(on)

-100

1.8

-0.68

P-SOT223-4-1

Drain

pin 2/4

Gate

pin1

Source

pin 3

Ω

Package

BSP 316 P P-SOT223-4-1

Type

Ordering Code

Q67042-S4165

Tape and Reel Information

Marking

BSP316P

Maximum Ratings,

= 25 °C, unless otherwise specified

Parameter

Continuous drain current

=25°C

=70°C

Symbol

Value

-0.68

-0.54

Unit

Pulsed drain current

=25°C

D puls

dv/dt

tot

j ,

stg

-2.72

±20

1.8

-55... +150

55/150/56

kV/µs

°C

Reverse diode dv/dt

=-0.68A,

=-48V, di/dt=-200A/µs,

jmax

=150°C

Gate source voltage

Power dissipation

=25°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Page 1

2002-07-24

BSP316PH6327 Related Products

	BSP316PH6327	BSP316PE6327	BSP316PE6327T	BSP316PL6327HTSA1	BSP316PH6327HTSA1
Description	Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOT223-4-1, 4 PIN	mosfet P-CH 100v 680ma sot223	MOSFET P-CH 100V 0.68A SOT223	MOSFET P-CH 100V 0.68A SOT-223	Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOT223-4-1, 4 PIN
Is it Rohs certified?	conform to	-	-	conform to	conform to
Maker	Infineon	-	-	Infineon	Infineon
Parts packaging code	SOT-223	-	-	SOT-223	SOT-223
package instruction	SMALL OUTLINE, R-PDSO-G4	-	-	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Contacts	4	-	-	4	4
Reach Compliance Code	compliant	-	-	compliant	compliant
ECCN code	EAR99	-	-	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE	-	-	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Shell connection	DRAIN	-	-	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	-	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	-	-	100 V	100 V
Maximum drain current (ID)	0.68 A	-	-	0.68 A	0.68 A
Maximum drain-source on-resistance	1.8 Ω	-	-	1.8 Ω	1.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4	-	-	R-PDSO-G4	R-PDSO-G4
Number of components	1	-	-	1	1
Number of terminals	4	-	-	4	4
Operating mode	ENHANCEMENT MODE	-	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	-	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	-	260	NOT SPECIFIED
Polarity/channel type	P-CHANNEL	-	-	P-CHANNEL	P-CHANNEL
Maximum pulsed drain current (IDM)	2.72 A	-	-	2.72 A	2.72 A
surface mount	YES	-	-	YES	YES
Terminal form	GULL WING	-	-	GULL WING	GULL WING
Terminal location	DUAL	-	-	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	-	-	40	NOT SPECIFIED
Transistor component materials	SILICON	-	-	SILICON	SILICON

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