IS42S32160B-75EBLI datasheet, PDF

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IS42S32160B-75EBLI: DescriptionSynchronous DRAM, 16MX32, 5.5ns, CMOS, PBGA90, 11 X 13 MM, 0.80 MM PITCH, LEAD FREE, WBGA-90; Categorystorage storage; File Size762KB，60 Pages; ManufacturerIntegrated Silicon Solution ( ISSI ); Environmental Compliance

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IS42S32160B-75EBLI Overview

Synchronous DRAM, 16MX32, 5.5ns, CMOS, PBGA90, 11 X 13 MM, 0.80 MM PITCH, LEAD FREE, WBGA-90

IS42S32160B-75EBLI Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Integrated Silicon Solution ( ISSI )
Parts packaging code	BGA
package instruction	TFBGA, BGA90,9X15,32
Contacts	90
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	5.5 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PBGA-B90
JESD-609 code	e1
length	13 mm
memory density	536870912 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	32
Number of functions	1
Number of ports	1
Number of terminals	90
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	16MX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA90,9X15,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.004 A
Maximum slew rate	0.3 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
width	11 mm

IS42S32160B-75EBLI Related Products

	IS42S32160B-75EBLI	IS42S32160B-6BLI	IS42S32160B-75ETLI	IS42S32160B-6TLI
Description	Synchronous DRAM, 16MX32, 5.5ns, CMOS, PBGA90, 11 X 13 MM, 0.80 MM PITCH, LEAD FREE, WBGA-90	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 11 X 13 MM, 0.80 MM PITCH, LEAD FREE, WBGA-90	Synchronous DRAM, 16MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86
Is it lead-free?	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
Parts packaging code	BGA	BGA	TSOP2	TSOP2
package instruction	TFBGA, BGA90,9X15,32	TFBGA, BGA90,9X15,32	TSOP2, TSSOP86,.46,20	TSOP2, TSSOP86,.46,20
Contacts	90	90	86	86
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	5.5 ns	5.4 ns	5.5 ns	5.4 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz	166 MHz	133 MHz	166 MHz
I/O type	COMMON	COMMON	COMMON	COMMON
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 code	R-PBGA-B90	R-PBGA-B90	R-PDSO-G86	R-PDSO-G86
JESD-609 code	e1	e1	e3	e3
length	13 mm	13 mm	22.22 mm	22.22 mm
memory density	536870912 bit	536870912 bit	536870912 bit	536870912 bit
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	32	32	32	32
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	90	90	86	86
word count	16777216 words	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000	16000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C
organize	16MX32	16MX32	16MX32	16MX32
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA	TSOP2	TSOP2
Encapsulate equivalent code	BGA90,9X15,32	BGA90,9X15,32	TSSOP86,.46,20	TSSOP86,.46,20
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	260	260	260	260
power supply	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES	YES
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
Maximum standby current	0.004 A	0.004 A	0.004 A	0.004 A
Maximum slew rate	0.3 mA	0.35 mA	0.3 mA	0.35 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	BALL	BALL	GULL WING	GULL WING
Terminal pitch	0.8 mm	0.8 mm	0.5 mm	0.5 mm
Terminal location	BOTTOM	BOTTOM	DUAL	DUAL
Maximum time at peak reflow temperature	40	40	40	40
width	11 mm	11 mm	10.16 mm	10.16 mm

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