PS1102FA
Features
Package
Right Angle type, Water clear epoxy
Surface Mount Phototransistor/Right Angle Type
Product features
・Outer
Dimension 3.0 x 1.2 x 2.5 mm ( L x W x H )
・Photo
Current : 7mA TYP. (V
CE
=5V,Ee=5mW/cm
2
)
・No
lead package
・Lead–free
soldering compatible
・RoHS
compliant
Peak Sensitivity Wavelength
Half Intensity Angle
Die materials
Rank grouping parameter
Assembly method
Soldering methods
880nm
θx
= 50 deg.,
θy
= 100 deg.
Si
Sorted by photo current per rank taping
Auto pick & place machine (Auto Mounter)
Reflow soldering, and manual soldering
※Please
refer to Soldering Conditions about soldering.
Taping and reel
ESD
3,000pcs per reel in a 8mm width tape. (Standard)
Reel diameter:φ180mm
2kV (HBM)
Recommended Applications
Car Audio, Electric Household Appliances, OA/FA, PC/Peripheral Equipment, Other General Applications
2005.9.29
Page 1
PS1102FA
Surface Mount Phototransistor/Right Angle Type
Absolute Maximum Ratings
Item
Collector Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Operating Temperature
Storage Temperature
Symbol
Absolute Maximum Ratings
(Ta=25℃)
Unit
mW
V
V
mA
℃
℃
Pc
V
CEO
V
ECO
Ic
T
opr
T
stg
75
30
5
20
-30½+85
-40½+100
Electro-Optical Characteristics
Item
Symbol
Characteristics
Min.
TYP.
1.4
7
(Ta=25℃)
Conditions
V
CE
=5V,
Ee=5mW/cm
2
※
1
Unit
mA
mA
Photo Current
Ic
Response Time
V
CE
=10V, Ic=2mA,
R
L
=100Ω
V
CEO
=10V
V
CE
=5V
V
CE
=5V
tr/tf
TYP.
8/9
μs
Dark Current
Peak Sensitivity Wavelength
Spatial Half Width
I
CEO
λp
⊿θ
Max.
TYP.
TYP.
0.1
880
50(θx)
100(θy)
μA
nm
deg.
※1
Color temperature is 2,856K. Employs a standard tungsten lamp.
2005.9.29
Page 2
PS1102FA
Surface Mount Phototransistor/Right Angle Type
Photo Current Rank
Ic(mA)
R ank
MIN.
A
B
C
D
E
1.4
2.4
4.2
7.2
12.6
MAX .
4.2
7.2
12.6
21.6
37.8
V
CE
= 5V
E e = 5mW/cm
2
(Ta=25℃)
Condition
※Please
contact our sales staff concerning rank designation.
2005.9.29
Page 3
PS1102FA
Surface Mount Phototransistor/Right Angle Type
Technical Data
Relative Sensitivity vs. Sensitivity Wavelength
Condition : Ta = 25℃, V
CE
= 5V
Spatial Distribution Example
Condition : Ta = 25℃
Relative Sensitivity
Sensitivity Wavelength [nm]
Radiation Luminance vs. Relative Photo Current
Condition : Ta = 25℃, V
CE
= 5V
Collector-Emitter Voltage vs. Photo Current
Condition : Ta = 25℃
Relative Photo Current Ic
Radiation Luminance Ee(mW/cm
2
)
It is based on Ee=5mW/cm
2
.
Employs a standard tungsten lamp of 2,856K.
Photo Current Ic (mA)
Collector-Emitter Voltage V
CE
(V)
Employs a standard tungsten lamp of 2,856K.
2005.9.29
Page 4
PS1102FA
Surface Mount Phototransistor/Right Angle Type
Technical Data
Response Time Measuring Circuit
Load Resistance vs. Response Time
Condition : V
CE
=10V, Ic=2mA, Ta=25℃
Response Time (μs)
Load Resistance : R
L
(Ω)
Ambient Temperature vs. Collector Dissipation
Ambient Temperature vs. Dark Current
Condition : V
CEO
= 10V
Collector Dissipation : Pc(mW)
Ambient Temperature : Ta(℃)
Dark Current : I
CEO
(A)
Ambient Temperature : Ta(℃)
2005.9.29
Page 5
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