IC,EEPROM,NAND FLASH,64MX8,CMOS,BGA,63PIN,PLASTIC
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | SAMSUNG |
| package instruction | FBGA, BGA63,10X12,32 |
| Reach Compliance Code | compliant |
| Maximum access time | 45 ns |
| command user interface | YES |
| Data polling | NO |
| JESD-30 code | R-PBGA-B63 |
| JESD-609 code | e0 |
| memory density | 536870912 bit |
| Memory IC Type | FLASH |
| memory width | 8 |
| Number of departments/size | 4K |
| Number of terminals | 63 |
| word count | 67108864 words |
| character code | 64000000 |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 64MX8 |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | FBGA |
| Encapsulate equivalent code | BGA63,10X12,32 |
| Package shape | RECTANGULAR |
| Package form | GRID ARRAY, FINE PITCH |
| page size | 512 words |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 2.7 V |
| Certification status | Not Qualified |
| ready/busy | YES |
| Department size | 16K |
| Maximum standby current | 0.00005 A |
| Maximum slew rate | 0.02 mA |
| Nominal supply voltage (Vsup) | 2.7 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | BALL |
| Terminal pitch | 0.8 mm |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| switch bit | NO |
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