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BSO080P03SH

Description
12.6 A, 30 V, 0.008 ohm, P-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size321KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSO080P03SH Overview

12.6 A, 30 V, 0.008 ohm, P-CHANNEL, Si, POWER, MOSFET

BSO080P03SH Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionGREEN, PLASTIC PACKAGE-8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)248 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)12.6 A
Maximum drain current (ID)12.6 A
Maximum drain-source on-resistance0.008 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level3
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)2.5 W
Maximum pulsed drain current (IDM)60 A
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1

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