NAND512W4A1BN6E datasheet, PDF

NAND512W4A1BN6E: DescriptionFlash, 32MX16, 12000ns, PDSO48, 12 X 20 MM, TSOP-48; Categorystorage storage; File Size150KB，5 Pages; ManufacturerNumonyx ( Micron ); Websitehttps://www.micron.com; Environmental Compliance

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NAND512W4A1BN6E Overview

Flash, 32MX16, 12000ns, PDSO48, 12 X 20 MM, TSOP-48

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Numonyx ( Micron )
Parts packaging code	TSOP
package instruction	12 X 20 MM, TSOP-48
Contacts	48
Reach Compliance Code	compliant
ECCN code	3A991.B.1.A
Maximum access time	12000 ns
JESD-30 code	R-PDSO-G48
JESD-609 code	e3
length	18.4 mm
memory density	536870912 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	48
word count	33554432 words
character code	32000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	32MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
type	SLC NAND TYPE
width	12 mm

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