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MMBT3904LT1

Description
200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Categorysemiconductor    Discrete semiconductor   
File Size659KB,7 Pages
ManufacturerWILLAS ELECTRONIC CORP.
Websitehttp://www.willas.com.tw/
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MMBT3904LT1 Overview

200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

MMBT3904LT1 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum on-time70 ns
Maximum off time250 ns
Maximum collector current0.2000 A
Maximum Collector-Emitter Voltage40 V
Processing package descriptionCASE 318-08, 3 PIN
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Maximum ambient power consumption0.2190 W
Transistor typeUniversal small signal
Minimum DC amplification factor100
Rated crossover frequency200 MHz
WILLAS
General Purpose Transistor
RoHS product for packing code suffix "G",
Weight : 0.008g
Device
MMBT3904LT1
Halogen free product for packing code suffix "H" .
MMBT3904LT1
ORDERING INFORMATION
Marking
1AM
Shipping
3000/Tape & Reel
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
V
V
CEO
CBO
EBO
Value
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
1
SOT–23
3
COLLECTOR
I
C
BASE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Operating
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
R
θJA
T
J
, T
stg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
2
EMITTER
R
θJA
P
D
DEVICE MARKING
MMBT3904LT1
= 1AM
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I
C
= 1.0 mAdc)
Collector–Base Breakdown Voltage
(I
C
= 10
µAdc)
Emitter–Base Breakdown Voltage
(I
E
= 10
µAdc)
Base Cutoff Current
( V
CE
= 30 Vdc, V
EB
= 3.0 Vdc, )
Collector Cutoff Current
( V
CE
= 30Vdc, V
BE
= 3.0Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300
µs,
Duty Cycle <2.0%.
I
BL
I
CEX
50
50
nAdc
nAdc
V
(BR)EBO
6.0
Vdc
V
(BR)CBO
60
Vdc
V
(BR)CEO
40
Vdc

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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