RFHA1025
280W GaN
Wideband
Pulsed Power
Amplifier
RFHA1025
280W GaN Wideband Pulsed Power Amplifier
Package: Flanged Ceramic, 2-Pin
Features
Wideband Operation: 0.96GHz to
1.215GHz
Advanced GaN HEMT Technology
Advanced Heat-Sink Technology
Supports Multiple Pulse
Conditions
10% to 20% Duty Cycle
100s to 1ms Pulse Width
Integrated Matching
Components for High Terminal
Impedances
RF IN
VG
Pin 1 (CUT )
RF OUT
T
VD
Pin 2
G
GND
B
BASE
50V Operation Typical
Performance
Functional Block Diagram
Output Pulsed Power 280W
Pulse Width 100S,
Duty Cycle 10%
Small Signal Gain 17dB
High Efficiency 55%
-40°C to 85°C Operating
Temperature
Product Description
The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band
pulsed radar, air traffic control and surveillance and general purpose broadband
amplifier applications. Using an advanced high power density gallium nitride (GaN)
semiconductor process, these high performance amplifiers achieve high output
power, high efficiency and flat gain over a broad frequency range in a single pack-
age. The RFHA1025 is a matched power transistor packaged in a hermetic, flanged
ceramic package. The package provides excellent thermal stability through the use
of advanced heat sink and power dissipation technologies. Ease of integration is
accomplished through the incorporation of single, optimized matching networks
that provide wideband gain and power performance in a single amplifier.
Applications
Radar
Air Traffic Control and
Surveillance
General Purpose Broadband
Amplifiers
Ordering Information
RFHA1025S2
RFHA1025SB
RFHA1025SQ
RFHA1025SR
RFHA1025TR13
RFHA1025PCBA-410
2-Piece sample bag
5-Piece bag
25-Piece bag
50 Pieces on 7” short reel
250 Pieces on 13” reel
Fully assembled evaluation board 0.96GHz to .215GHz;50V
Optimum Technology Matching
®
Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
SOI
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
DS120928
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
1 of 10
RFHA1025
Absolute Maximum Ratings
Parameter
Drain Voltage (V
D
)
Gate Voltage (V
G
)
Gate Current (I
G
)
Ruggedness (VSWR)
Storage Temperature Range
Operating Temperature Range (T
C
)
Operating Junction Temperature (T
J
)
Human Body Model
MTTF (T
J
< 200°C, 95% Confidence Limits)*
MTTF (T
J
< 250°C, 95% Confidence Limits)*
Thermal Resistance, R
TH
(junction to case):
T
C
= 85°C, DC bias only
T
C
= 85°C, 100s pulse, 10% duty cycle
T
C
= 85°C, 1ms pulse, 10% duty cycle
Rating
150
-8 to 2
155
10:1
-55 to +125
-40 to +85
250
Class 1B
1.8E + 07
1.1E + 05
0.90
0.18
0.34
Unit
V
V
mA
°C
°C
°C
Hours
Hours
°C/W
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
* MTTF - median time to failure for wear-out failure mode (30% I
DSS
degradation) which is determined by the technology process reliability.
Refer to product qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values.
Bias Conditions should also satisfy the following expression: P
DISS
< (T
J
- T
C
)/R
TH
J - C and T
C
= T
CASE
Parameter
Drain Voltage (V
DSQ
)
Gate Voltage (V
GSQ
)
Drain Bias Current
Frequency of Operation
Min.
Specification
Typ.
50
Max.
Unit
V
Condition
Recommended Operating Conditions
-8
960
-3
440
1215
2
2.5
-3.5
0.28
-2
V
mA
MHz
mA
mA
V
V
V
G
= -8V, V
D
= 0V
V
G
= -8V, V
D
= 50V
V
D
= 50V, I
D
= 40mA
V
G
= 0V, I
D
= 1.5A
[1], [2]
17
13
54
50
13
54
50
14.2
-7.5
55.2
55
17
13.6
-7
54.6
59
-5
-5
dB
dB
dB
dBm
%
dB
dB
dB
dBm
%
f = 1215MHz, P
IN
= 28dBm
f = 1215MHz, P
IN
= 41dBm
f = 960MHz, P
IN
= 28dBm
f = 960MHz, P
IN
= 41dBm
DC Functional Test
I
G (OFF)
– Gate Leakage
I
D (OFF)
– Drain Leakage
V
GS (TH)
– Threshold Voltage
V
DS (ON)
– Drain Voltage at High
Current
RF Functional Test
Small Signal Gain
Power Gain
Input Return Loss
Output Power
Drain Efficiency
Small Signal Gain
Power Gain
Input Return Loss
Output Power
Drain Efficiency
2 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120928
RFHA1025
Parameter
RF Typical Performance
Frequency Range
Small Signal Gain
Power Gain
Gain Variation with Temperature
Output Power (P
SAT
)
Drain Efficiency
54.5
280
55
[1] Test Conditions: PW = 100s, DC = 10%, V
DSQ
= 50V, I
DQ
= 440mA, T = 25°C.
[2] Performance in a standard tuned test fixture.
960
17
14
1215
MHz
dB
dB
dB/°C
dBm
W
%
At peak output power
P
IN
= 28dBm
P
OUT
= 54.5dBm
At peak output power
Peak output power
Min.
Specification
Typ.
Max.
Unit
[1], [2]
Condition
DS120928
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
3 of 10
RFHA1025
Typical Performance in Standard Fixed Tuned Test Fixture
(T = 25°C, unless noted)
Gain versus Output Power (f = 1100MHz)
(Pulsed 10% duty cycle, PW=100 , V
D
= 50V,
20
19
18
Gain (dB)
17
16
15
14
13
47
49
51
Output Power (dBm)
53
55
I
DQ
= 440mA)
70
Efficiency versus Output Power (f = 1100MHz)
(Pulsed 10% duty cycle, PW = 100μS, V
D
= 50V, I
DQ
= 440mA)
60
Drain Efficiency (%)
50
40
Eff 85°C
Eff 25°C
Eff 40°C
30
20
10
45
47
49
51
Output Power (dBm)
53
55
Gain 85°C
Gain 25°C
Gain 40°C
Input Return Loss versus Output Power (f = 1100MHz)
(Pulsed 10% duty cycle, PW = 100μS, V
D
= 50V, I
DQ
= 440mA)
4
6
IRL, Input Return Loss (dB)
8
10
Small Signal Performance versus Frequency, P
OUT
= 45dBm
(Pulsed 10% duty cycle, PW = 100μ , V
D
= 50V, I
DQ
= 440mA)
19
Fixed tuned test circuit
18
9
Input Return Loss (dB)
7
17
Gain (dB)
11
12
14
16
18
20
47
49
51
Output Power (dBm)
53
55
IRL 85°C
IRL 25°C
IRL 40°C
16
13
15
Gain
14
IRL
15
17
13
950
1000
1050
1100
1150
Frequency (MHz)
1200
1250
19
Gain/IRL versus Frequency, P
OUT
= 54.5dBm
(Pulsed 10% duty cycle, PW=100 , V
D
= 50V, I
DQ
= 440mA)
20
19
18
17
Gain (dB)
16
15
14
13
12
950
1000
1050
1100
Frequency (MHz)
1150
1200
1250
Fixed tuned test circuit
6
7
8
Drain Efficiency versus Frequency, P
OUT
= 54.5dBm
(Pulsed 10% duty cycle, PW = 100μS, V
D
= 50V, I
DQ
= 440mA)
65
63
61
59
Drain Efficiency (%)
9
10
11
12
13
14
Input Return Loss (dB)
Fixed tuned test circuit
57
55
53
51
49
47
45
950
1000
1050
1100
1150
Frequency (MHz)
1200
1250
Eff
Gain
IRL
4 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120928
RFHA1025
Typical Performance in Standard Fixed Tuned Test Fixture
(T = 25°C, unless noted)
Gain/Efficiency versus P
OUT
, Freq = 1100MHz
(Pulsed 10% duty cycle, PW = 100μS, V
D
= 50V, I
DQ
= 440mA)
20
19
18
Gain (dB)
17
16
15
14
13
12
47
48
49
50
51
52
P
OUT
, Output Power (dBm)
53
54
55
Gain
Drain Eff
65
60
55
Drain Efficiency (%)
50
45
40
35
30
25
275
250
10
100
Pulse Width (μsec)
1000
45
40
350
P
OUT
(W)
325
300
60
55
50
Drain Efficiency(%)
400
375
P
OUT
/DE versus Pulse Width, Freq = 1100MHz
(Pulsed 10% duty cycle, V
D
= 50V, I
DQ
= 440mA)
70
65
Output Power
Drain Eff
P
OUT
/DE versus Duty Cycle, Freq = 1100MHz
(Pulsed, PW = 100μS, V
D
= 50V, I
DQ
= 440mA)
375
350
325
P
OUT
(W)
300
275
250
225
10
15
20
25
30
35
Duty Cycle (%)
40
45
50
70
65
Power Dissipation (W)
1200
Pulse Power Dissipation De rating Curve
(Based on Maximum package temperature and Rth)
1000
1mS Pulse Width, 10% Duty Cycle
100 S Pulse Width, 10% Duty Cycle
60
55
50
45
40
Drain Efficiency(%)
800
600
400
Output Power
Drain Eff
200
0
0
20
40
60
80
100
120
140
Maximum Case Temperature (°C)
DS120928
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
5 of 10
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