2N6226 datasheet, PDF - EEWORLD Datasheet

2N6226: DescriptionPower Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,; CategoryDiscrete semiconductor The transistor; File Size61KB，1 Pages; ManufacturerAPI Technologies; Websitehttp://www.apitech.com/about-api

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Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin,

Parameter Name	Attribute value
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power dissipation(Abs)	150 W
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	1 MHz
VCEsat-Max	1 V
Base Number Matches	1

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