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MT46V8M16P-75EIT

Description
DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
Categorystorage    storage   
File Size2MB,82 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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MT46V8M16P-75EIT Overview

DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66

MT46V8M16P-75EIT Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeTSOP
package instructionTSSOP, TSSOP66,.46
Contacts66
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.75 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
interleaved burst length2,4,8
JESD-30 codeR-PDSO-G66
JESD-609 codee3
length22.22 mm
memory density134217728 bit
Memory IC TypeDDR DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals66
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP66,.46
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius)260
power supply2.5 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.2 mm
self refreshYES
Continuous burst length2,4,8
Maximum standby current0.003 A
Maximum slew rate0.375 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
width10.16 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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