VN50300L datasheet, PDF - EEWORLD Datasheet

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VN50300L: DescriptionSmall Signal Field-Effect Transistor, 0.033A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-226AA (TO-92), 3 PIN; CategoryDiscrete semiconductor The transistor; File Size33KB，1 Pages; ManufacturerTEMIC; Websitehttp://www.temic.de/

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VN50300L Overview

Small Signal Field-Effect Transistor, 0.033A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-226AA (TO-92), 3 PIN

VN50300L Parametric

Parameter Name	Attribute value
Maker	TEMIC
package instruction	TO-226AA (TO-92), 3 PIN
Reach Compliance Code	unknown
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	0.033 A
Maximum drain-source on-resistance	300 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-226AA
JESD-30 code	O-PBCY-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

VN50300L Related Products

	VN50300L	VN50300T
Description	Small Signal Field-Effect Transistor, 0.033A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-226AA (TO-92), 3 PIN	Small Signal Field-Effect Transistor, 0.022A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN
Maker	TEMIC	TEMIC
package instruction	TO-226AA (TO-92), 3 PIN	TO-236, 3 PIN
Reach Compliance Code	unknown	unknown
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	500 V
Maximum drain current (ID)	0.033 A	0.022 A
Maximum drain-source on-resistance	300 Ω	300 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-226AA	TO-236
JESD-30 code	O-PBCY-W3	R-PDSO-G3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	RECTANGULAR
Package form	CYLINDRICAL	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal form	WIRE	GULL WING
Terminal location	BOTTOM	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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