1.7 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
| Parameter Name | Attribute value |
| Number of terminals | 3 |
| Minimum breakdown voltage | 600 V |
| Processing package description | LEAD FREE, TO-220, FULL PACK-3 |
| Lead-free | Yes |
| EU RoHS regulations | Yes |
| state | ACTIVE |
| packaging shape | RECTANGULAR |
| Package Size | FLANGE MOUNT |
| Terminal form | THROUGH-HOLE |
| terminal coating | MATTE TIN |
| Terminal location | SINGLE |
| Packaging Materials | PLASTIC/EPOXY |
| structure | SINGLE WITH BUILT-IN DIODE |
| Shell connection | ISOLATED |
| Number of components | 1 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Channel type | N-CHANNEL |
| field effect transistor technology | METAL-OXIDE SEMICONDUCTOR |
| operating mode | ENHANCEMENT |
| Transistor type | GENERAL PURPOSE POWER |
| Maximum leakage current | 1.7 A |
| Rated avalanche energy | 84 mJ |
| Maximum drain on-resistance | 4.4 ohm |
| Maximum leakage current pulse | 6.8 A |
| SIHFIBC20G-E3 | IRFIBC20G | IRFIBC20GPBF | SIHFIBC20G | |
|---|---|---|---|---|
| Description | 1.7 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 1.7 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 1.7 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 1.7 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| Number of terminals | 3 | 3 | 3 | 3 |
| Minimum breakdown voltage | 600 V | 600 V | 600 V | 600 V |
| Processing package description | LEAD FREE, TO-220, FULL PACK-3 | LEAD FREE, TO-220, FULL PACK-3 | LEAD FREE, TO-220, FULL PACK-3 | LEAD FREE, TO-220, FULL PACK-3 |
| Lead-free | Yes | Yes | Yes | Yes |
| EU RoHS regulations | Yes | Yes | Yes | Yes |
| state | ACTIVE | ACTIVE | ACTIVE | ACTIVE |
| packaging shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package Size | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| terminal coating | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
| Packaging Materials | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| structure | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Number of components | 1 | 1 | 1 | 1 |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| field effect transistor technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| operating mode | ENHANCEMENT | ENHANCEMENT | ENHANCEMENT | ENHANCEMENT |
| Transistor type | GENERAL PURPOSE POWER | GENERAL PURPOSE POWER | GENERAL PURPOSE POWER | GENERAL PURPOSE POWER |
| Maximum leakage current | 1.7 A | 1.7 A | 1.7 A | 1.7 A |
| Rated avalanche energy | 84 mJ | 84 mJ | 84 mJ | 84 mJ |
| Maximum drain on-resistance | 4.4 ohm | 4.4 ohm | 4.4 ohm | 4.4 ohm |
| Maximum leakage current pulse | 6.8 A | 6.8 A | 6.8 A | 6.8 A |
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