EEWORLDEEWORLDEEWORLD

Part Number

Search

HS7B-2622RH-Q

Description
OP-AMP, 100MHz BAND WIDTH, CDIP8, SIDE BRAZED, DIP-8
CategoryAnalog mixed-signal IC    Amplifier circuit   
File Size77KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

HS7B-2622RH-Q Overview

OP-AMP, 100MHz BAND WIDTH, CDIP8, SIDE BRAZED, DIP-8

HS7B-2622RH-Q Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Parts packaging codeDIP
package instructionDIP, DIP8,.3
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Amplifier typeOPERATIONAL AMPLIFIER
ArchitectureVOLTAGE-FEEDBACK
Maximum bias current (IIB) at 25C0.06 µA
frequency compensationYES (AVCL>=5)
Maximum input offset voltage7000 µV
JESD-30 codeR-CDIP-T8
low-dissonanceNO
Nominal Negative Supply Voltage (Vsup)-15 V
Number of functions1
Number of terminals8
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Encapsulate equivalent codeDIP8,.3
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply+-15 V
Certification statusNot Qualified
Filter levelMIL-PRF-38535 Class V
Maximum seat height5.08 mm
minimum slew rate15 V/us
Maximum slew rate4.3 mA
Supply voltage upper limit20 V
Nominal supply voltage (Vsup)15 V
surface mountNO
technologyBIPOLAR
Temperature levelMILITARY
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
total dose10k Rad(Si) V
Nominal Uniform Gain Bandwidth100000 kHz
Minimum voltage gain60000
broadbandYES
width7.62 mm

HS7B-2622RH-Q Preview

HS-2620RH, HS-2622RH
Data Sheet
August 1999
File Number
4014.1
Radiation Hardened, Very Wideband, High
Input Impedance Uncompensated
Operational Amplifiers
HS-2620RH and HS-2622RH are radiation hardened bipolar
operational amplifiers that feature very high input impedance
coupled with wideband AC performance. The high resistance
of the input stage is complemented by low offset voltage (4mV
Max at 25
o
C for HS-2620RH) and low bias and offset current
(15nA Max at 25
o
C for HS-2620RH) to facilitate accurate
signal processing. Offset voltage can be reduced further by
means of an external nulling potentiometer. Closed loop gains
greater than 5, the 25V/µs minimum slew rate at 25
o
C and the
100kV/V minimum open loop gain at 25
o
C, enables the
HS-2620RH to perform high gain amplification of very fast,
wideband signals. These dynamic characteristics, coupled
with fast settling times, make these amplifiers ideally suited to
pulse amplification designs as well as high frequency or video
applications. The frequency response of the amplifier can be
tailored to exact design requirements by means of an external
bandwidth control capacitor. Other high performance designs
such as high gain, low distortion audio amplifiers, high-Q and
wideband active filters and high speed comparators are
excellent uses of this part.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95688. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Features
• Electrically Screened to SMD # 5962-95688
• QML Qualified per MIL-PRF-38535 Requirements
• High Input Impedance (HS-2620RH) . . . . . . . 65MΩ (Min)
• High Gain (HS-2620RH) . . . . . . . . . . . . . . . . 100kV/V (Min)
150kV/V (Typ)
• High Slew Rate (HS-2620RH) . . . . . . . . . . . . . . 25V/µs (Min)
35V/µs (Typ)
• Low Input Bias Current (HS-2620RH) . . . . . . . 15nA (Max)
5nA (Typ)
• Low Input Offset Voltage (HS-2620RH) . . . . . . 4mV (Max)
• Wide Gain Bandwidth Product (AV
5) . . . . . .100MHz (Typ)
• Output Short Circuit Protection
• Total Dose . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 x 10
4
RAD(Si)
Applications
• Video and RF Amplifiers
• Pulse Amplifiers
• Audio Amplifiers and Filters
• High-Q Active Filters
• High Speed Comparators
Ordering Information
ORDERING NUMBER
5962D9568801VGA
5962D9568801VPA
5962D9568801VPC
5962D9568802VGA
5962D9568802VPA
5962D9568802VPC
INTERNAL
MKT. NUMBER
HS2-2620RH-Q
HS7-2620RH-Q
HS7B-2620RH-Q
HS2-2622RH-Q
HS7-2622RH-Q
HS7B-2622RH-Q
TEMP. RANGE
(
o
C)
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
Pinouts
HS7-2620RH, HS7-2622RH (CERDIP) GDIP1-T8
OR
HS7B-2620RH, HS7B-2622RH (SBDIP) CDIP2-T8
TOP VIEW
BAL
-IN
+IN
V-
1
2
3
4
8
COMP
V+
OUT
BAL
IN-
2
BAL
1
HS2-2620RH, HS2-2622RH (CAN) MACY1-X8
TOP VIEW
COMP
8
7
V+
-
+
7
6
5
-
+
3
4
V-
5
6
OUT
IN+
BAL
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
HS-2620RH, HS-2622RH
Test Circuit
400
1.6K
ACOUT
+VCC
0.1
100K
1 OPEN
2 S3A
S1
OPEN 2
S2
OPEN 2
100K 2
1
OPEN
S3B
2
1
1
1
2
1
S7
OPEN
1
2
500K
DUT
+
OPEN 1
2K
VAC
50
0.1
1
-VEE
x2
5K
2
1
50K
S4
ALL RESISTORS =
±1%
(Ω)
ALL CAPACITORS =
±10%
(µF)
EOUT
S5B 1
S8
2
10K
OPEN
3
1
S9
2
V2
BUFFER
50K
50pF (NOTE)
3
RAL 2
ADJ
FOR LOOP STABILITY,
USE MIN VALUE CAPACITOR
TO PREVENT OSCILLATION
-1/10
V1
-
S5A
1 S6
-
+1
+
-
100
100
NOTE: Includes stray capacitances.
FIGURE 1. TEST LOOP FOR THE HS-2620RH AND THE HS-2622RH
Test Circuits and Waveforms
VAC IN
+
VAC OUT
1.6K
-
50Ω
50pF
400Ω
FIGURE 2. SIMPLIFIED TEST CIRCUIT
+5.0V
+1.0V
INPUT
-1.0V
+SL
-SL
-1.0V
T
SR =
+1.0V
-5.0V
∆V
∆T
T
V
OUTPUT
∆V
+5.0V
-5.0V
FIGURE 3. SLEW RATE WAVEFORM
VFINAL = +200mV
+40mV
INPUT
0V
t
r
, +OS
t
f
, -OS
-40mV
t
r
t
f
0V
VPEAK
90%
OUTPUT
10%
0V
90%
-200mV
0V
10%
VPEAK
NOTE: Measured on both positive and negative transitions. Capacitance at Compensation pin should be minimized.
FIGURE 4. OVERSHOOT, RISE AND FALL TIME WAVEFORMS
2
HS-2620RH, HS-2622RH
Burn-In Circuits
HS7-2620RH CERDIP
HS7-2622RH CERDIP
HS2-2620RH (TO-99) METAL CAN
HS2-2622RH (TO-99) METAL CAN
1
R1
2
3
V-
D2
4
C2
-
+
8
7
6
5
2
C3
C
V+
D1
1
8
7
-
+
3
4
5
6
R1
C2
V-
D2
NOTES:
1. R1 = 1MΩ,
±5%,
1/4W (Min)
2. C1 = C2 = 0.01µF/Socket (Min) of 0.1µF/Row (Min)
3. C3 = 0.01µF/Socket (10%)
4. D1 = D2 = IN4002 or Equivalent/Board
5. I(V+) - (V -)I = 31V
±1V
Irradiation Circuit
C
1
2
R
3
V2
4
C
5
6
8
C
7
V1
GND
NOTES:
6. V1 = +15V
±10%
7. V2 = -15V
±10%
8. R = 1MΩ
±5%
9. C = 0.1µF
±10%
3
HS-2620RH, HS-2622RH
Schematic Diagram
COMPENSATION
V+
BAL
R1
1K
Q1
Q3
Q4
Q37
Q5
+INPUT
Q11
Q8
Q13
Q12
Q16
R7
1.35
R19
2.5K
RP1
R8
1K
Q20
R9
4.5K
R10
2.0K
Q6
Q30
Q7
Q9
Q44
Q10
Q17
Q18
Q15
Q27
Q24
Q46
R11
4.0K
Q21
Q22
Q23
Q49
Q50
Q51
C1
16pF
R12
1.6K
R13
1.6K
R14
2.8K
R15
800
R16
30
V-
-INPUT
Q48
Q45
Q47
Q52
Q26
Q25
Q55
Q54
Q56
R18
30
OUT
Q53
R17
30
Q29
Q31
Q28
Q2
Q40
Q39
Q38
Q41
Q42
Q59
Q58
Q35
Q33
Q43
Q57
R2
4.18K
R3
1.56K
R4
1.56K
BAL
C2
9pF
R5
600
Q60
Q61
R6
30
Q36
Q32
Q19
4
HS-2620RH, HS-2622RH
Die Characteristics
DIE DIMENSIONS:
69 mils x 66 mils x 19 mils
±1
mil
1750µm x 1420µm x 483µm
±25.4µm
INTERFACE MATERIALS:
Glassivation:
Type: Nitride (S13N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12k
Å
±2k
Å
Nitride Thickness: 3.5k
Å
±1.5k
Å
Top Metallization:
Type: Al, 1% Cu
Thickness: 18k
Å
±2k
Å
Substrate:
Linear Bipolar, DI
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential
(Powered Up):
Unbiased
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2 x 10
5
A/cm
2
Transistor Count:
HS-2620RH: 140
HS-2622RH: 140
Metallization Mask Layout
HS-2620RH, HS-2622RH
COMP
V+
BAL
OUT
-IN
+IN
BAL
V-
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
5

HS7B-2622RH-Q Related Products

HS7B-2622RH-Q HS2-2622RH-Q HS7-2622RH-Q HS7B-2620RH-Q HS2-2620RH-Q HS7-2620RH-Q
Description OP-AMP, 100MHz BAND WIDTH, CDIP8, SIDE BRAZED, DIP-8 HS2-2622RH-Q HS7-2622RH-Q OP-AMP, 4000uV OFFSET-MAX, 100MHz BAND WIDTH, CDIP8, SIDE BRAZED, DIP-8 HS2-2620RH-Q HS7-2620RH-Q
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
Parts packaging code DIP BCY DIP DIP BCY DIP
package instruction DIP, DIP8,.3 , CAN8,.2 DIP, DIP8,.3 DIP, DIP8,.3 , CAN8,.2 DIP, DIP8,.3
Contacts 8 8 8 8 8 8
Reach Compliance Code compliant not_compliant not_compliant not_compliant not_compliant not_compliant
Amplifier type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
Maximum bias current (IIB) at 25C 0.06 µA 0.025 µA 0.025 µA 0.035 µA 0.015 µA 0.015 µA
frequency compensation YES (AVCL>=5) YES (AVCL>=5) YES (AVCL>=5) YES (AVCL>=5) YES (AVCL>=5) YES (AVCL>=5)
Maximum input offset voltage 7000 µV 7000 µV 7000 µV 4000 µV 4000 µV 4000 µV
JESD-30 code R-CDIP-T8 O-MBCY-W8 R-GDIP-T8 R-CDIP-T8 O-MBCY-W8 R-GDIP-T8
low-dissonance NO NO NO NO NO NO
Nominal Negative Supply Voltage (Vsup) -15 V -15 V -15 V -15 V -15 V -15 V
Number of functions 1 1 1 1 1 1
Number of terminals 8 8 8 8 8 8
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Package body material CERAMIC, METAL-SEALED COFIRED METAL CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED METAL CERAMIC, GLASS-SEALED
Encapsulate equivalent code DIP8,.3 CAN8,.2 DIP8,.3 DIP8,.3 CAN8,.2 DIP8,.3
Package shape RECTANGULAR ROUND RECTANGULAR RECTANGULAR ROUND RECTANGULAR
Package form IN-LINE CYLINDRICAL IN-LINE IN-LINE CYLINDRICAL IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply +-15 V +-15 V +-15 V +-15 V +-15 V +-15 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Filter level MIL-PRF-38535 Class V MIL-PRF-38535 Class V MIL-PRF-38535 Class V MIL-PRF-38535 Class V MIL-PRF-38535 Class V MIL-PRF-38535 Class V
minimum slew rate 15 V/us 15 V/us 15 V/us 20 V/us 20 V/us 20 V/us
Maximum slew rate 4.3 mA 4.3 mA 4.3 mA 4 mA 4 mA 4 mA
Supply voltage upper limit 20 V 20 V 20 V 20 V 20 V 20 V
Nominal supply voltage (Vsup) 15 V 15 V 15 V 15 V 15 V 15 V
surface mount NO NO NO NO NO NO
technology BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR
Temperature level MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
Terminal form THROUGH-HOLE WIRE THROUGH-HOLE THROUGH-HOLE WIRE THROUGH-HOLE
Terminal location DUAL BOTTOM DUAL DUAL BOTTOM DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
total dose 10k Rad(Si) V 10k Rad(Si) V 10k Rad(Si) V 10k Rad(Si) V 10k Rad(Si) V 10k Rad(Si) V
Nominal Uniform Gain Bandwidth 100000 kHz 100000 kHz 100000 kHz 100000 kHz 100000 kHz 100000 kHz
Minimum voltage gain 60000 60000 60000 70000 70000 70000
broadband YES YES YES YES YES YES
encapsulated code DIP - DIP DIP - DIP
Maximum seat height 5.08 mm - 5.08 mm 5.08 mm - 5.08 mm
Terminal pitch 2.54 mm - 2.54 mm 2.54 mm - 2.54 mm
width 7.62 mm - 7.62 mm 7.62 mm - 7.62 mm
JESD-609 code - e0 e0 e0 e0 e0
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号