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IDT71V67902S85BGGI

Description
Cache SRAM, 512KX18, 8.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119
Categorystorage    storage   
File Size985KB,23 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric View All

IDT71V67902S85BGGI Overview

Cache SRAM, 512KX18, 8.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119

IDT71V67902S85BGGI Parametric

Parameter NameAttribute value
MakerIDT (Integrated Device Technology)
Parts packaging codeBGA
package instructionBGA,
Contacts119
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time8.5 ns
Other featuresFLOW-THROUGH ARCHITECTURE
JESD-30 codeR-PBGA-B119
JESD-609 codee0
length22 mm
memory density9437184 bit
Memory IC TypeCACHE SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of terminals119
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX18
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum seat height2.36 mm
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN LEAD
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width14 mm
256K X 36, 512K X 18
IDT71V67702
3.3V Synchronous SRAMs
IDT71V67902
2.5V I/O, Burst Counter
Flow-Through Outputs, Single Cycle Deselect
Features
x
x
x
x
x
x
x
x
256K x 36, 512K x 18 memory configurations
Supports fast access times:
– 7.5ns up to 117MHz clock frequency
– 8.0ns up to 100MHz clock frequency
– 8.5ns up to 87MHz clock frequency
LBO
input selects interleaved or linear burst mode
Self-timed write cycle with global write control (GW byte write
GW),
GW
enable (BWE and byte writes (BW
BWE),
BWx)
BWE
BW
3.3V core power supply
Power down controlled by ZZ input
2.5V I/O supply (V
DDQ
)
Packaged in a JEDEC Standard 100-pin thin plastic quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball
grid array (fBGA).
Description
The IDT71V67702/7902 are high-speed SRAMs organized as
256K x 36/512K x 18. The IDT71V67702/7902 SRAMs contain write,
data, address and control registers. There are no registers in the data
output path (flow-through architecture). Internal logic allows the SRAM to
generate a self-timed write based upon a decision which can be left until
the end of the write cycle.
The burst mode feature offers the highest level of performance to the
system designer, as the IDT71V67702/7902 can provide four cycles of
data for a single address presented to the SRAM. An internal burst address
counter accepts the first cycle address from the processor, initiating the
access sequence. The first cycle of output data will flow-through from the
array after a clock-to-data access time delay from the rising clock edge of
the same cycle. If burst mode operation is selected (ADV=LOW), the
subsequent three cycles of output data will be available to the user on the
next three rising clock edges. The order of these three addresses are
defined by the internal burst counter and the
LBO
input pin.
The IDT71V67702/7902 SRAMs utilize IDT’s latest high-performance
CMOS process and are packaged in a JEDEC standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA) and a 165 fine pitch ball grid array (fBGA).
Pin Description Summary
A
0
-A
18
CE
CS
0
,
CS
1
OE
GW
BWE
BW
1
,
BW
2
,
BW
3
,
BW
4
(1)
CLK
ADV
ADSC
ADSP
LBO
ZZ
I/O
0
-I/O
31
, I/O
P1
-I/O
P4
V
DD
, V
DDQ
V
SS
Address Inputs
Chip Enable
Chip Selects
Output Enable
Global Write Enable
Byte Write Enable
Individual Byte Write Selects
Clock
Burst Address Advance
Address Status (Cache Controller)
Address Status (Processor)
Linear / Interleaved Burst Order
Sleep Mode
Data Input / Output
Core Power, I/O Power
Ground
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
I/O
Supply
Supply
Synchronous
Synchronous
Synchronous
Asynchronous
Synchronous
Synchronous
Synchronous
N/A
Synchronous
Synchronous
Synchronous
DC
Asynchronous
Synchronous
N/A
N/A
5317 tbl 01
NOTE:
1.
BW
3
and
BW
4
are not applicable for the IDT71V67902.
DECEMBER 2003
1
©2002 Integrated Device Technology, Inc.
DSC-5317/08
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