Silicon Controlled Rectifier, 520A I(T)RMS, 330000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | International Rectifier ( Infineon ) |
package instruction | DISK BUTTON, O-CEDB-N2 |
Reach Compliance Code | unknown |
Nominal circuit commutation break time | 25 µs |
Configuration | SINGLE |
Maximum DC gate trigger current | 200 mA |
Maximum DC gate trigger voltage | 3 V |
JEDEC-95 code | TO-200AB |
JESD-30 code | O-CEDB-N2 |
Humidity sensitivity level | 1 |
On-state non-repetitive peak current | 2900 A |
Number of components | 1 |
Number of terminals | 2 |
Maximum on-state current | 330000 A |
Maximum operating temperature | 125 °C |
Package body material | CERAMIC, METAL-SEALED COFIRED |
Package shape | ROUND |
Package form | DISK BUTTON |
Peak Reflow Temperature (Celsius) | 225 |
Certification status | Not Qualified |
Maximum rms on-state current | 520 A |
Off-state repetitive peak voltage | 1200 V |
Repeated peak reverse voltage | 1200 V |
surface mount | YES |
Terminal form | NO LEAD |
Terminal location | END |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Trigger device type | SCR |