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SG-210SGBFREQ2B3

Description
CRYSTAL OSCILLATOR, CLOCK, 16 MHz - 32 MHz, CMOS OUTPUT, ROHS COMPLIANT, SMD, 4 PIN
CategoryPassive components    oscillator   
File Size590KB,3 Pages
ManufacturerSeiko Epson Corporation
Environmental Compliance
Download Datasheet Parametric View All

SG-210SGBFREQ2B3 Overview

CRYSTAL OSCILLATOR, CLOCK, 16 MHz - 32 MHz, CMOS OUTPUT, ROHS COMPLIANT, SMD, 4 PIN

SG-210SGBFREQ2B3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSeiko Epson Corporation
Reach Compliance Codeunknown
Other featuresENABLE/DISABLE FUNCTION; TAPE AND REEL
maximum descent time5 ns
Frequency Adjustment - MechanicalNO
frequency stability50%
JESD-609 codee4
Installation featuresSURFACE MOUNT
Maximum operating frequency32 MHz
Minimum operating frequency16 MHz
Maximum operating temperature70 °C
Minimum operating temperature-20 °C
Oscillator typeCMOS
Output load15 pF
physical size2.5mm x 2.0mm x 0.8mm
longest rise time5 ns
Maximum supply voltage1.7 V
Minimum supply voltage1.3 V
Nominal supply voltage1.5 V
surface mountYES
maximum symmetry60/40 %
Terminal surfaceGold (Au)
Crystal oscillator
Epson Toyocom
Product Number (please contact us)
Q33210Bx0xxxx00
CRYSTAL OSCILLATOR
SPXO
SG - 210 S*B
2 MHz to 60 MHz
1.5 V Typ. / 1.8 V Typ. / 2.5 V Typ. / 3.3 V Typ.
0.9 mA Typ.
(SEB 1.8 V No load condition 48 MHz)
Actual size
•Function
:
Standby(
ST
)
•External
dimensions
:
2.5 × 2.0 × 0.8 t (mm) Typ.
•Operation
temperature
:
+105
°C
/ +125 °C
•Frequency
range
:
•Supply
voltage
:
•Current
consumption
:
Specifications (characteristics)
Item
Output frequency range
Supply voltage
Storage
Temperature temperature
range
Operating
temperature
Symbol
SG-210SGB
2 MHz to
32 MHz
1.5 V Typ.
1.3 V to 1.7 V
Specifications
SG-210SEB SG-210SDB
2 MHz to 60 MHz
1.8 V Typ.
1.6 V to 2.2 V
SG-210SCB
3.3 V Typ.
2.7 V to 3.6 V
Remarks
f
0
V
CC
T_stg
T_use
2.5 V Typ.
2.2 V to 3.0 V
-40
°C
to +125 °C
-40
°C
to +85 °C / -40
°C
to +105 °C / -40
°C
to +125 °C
Store as bare product after unpacking
Frequency tolerance
f_tol
1.0 mA Max.
0.3 µA Max.
45 % to 55 %
40 % to 60 %
Current consumption
Stand-by current
I
CC
I_std
Symmetry
High output voltage
Low output voltage
Output load condition
(CMOS)
Output enable /
disable input voltage
Rise time and Fall time
Start-up time
Frequency aging
SYM
V
OH
V
OL
L_CMOS
V
IH
V
IL
-10
°C
to +60
°C,
f
0
32 MHz,
V
CC
±10%,
except reflow drift.
-6
-
6
B:
±50 ×
10 , C:
±100 ×
10
-20
°C
to +70
°C
-6
-6
-40
°C
to +85
°C
L:±50 × 10 ,M:±100 × 10
-6
-6
-40
°C
to +105
°C
Y:±50 × 10 ,W:±100 × 10
-6
-6
-40
°C
to +125
°C
Z:±100 × 10 ,X:±150 × 10
1.6 mA Max. 2.4 mA Max. 3.0 mA Max. No load condition
2.0 mA Max 3.0 mA Max. 4.0 mA Max. No load condition +105
°C,+125 °C
0.5 µA Max. 1.0 µA Max. 1.0 µA Max.
ST
=GND
1.6 µA Max. 2.4 µA Max. 3.0 µA Max.
ST
=GND +105
°C,+125 °C
2 MHz≤
f
0
≤16
MHz
45 % to 55 % 45 % to 55 %
45 % to 55 % 16 MHz<
f
0
≤32
MHz
50 % V
CC
level
L_CMOS
15 pF
40 % to 60 % 40 % to 60 %
32 MHz<
f
0
≤60
MHz
40 % to 60 %
+105
°C,+125 °C
90 % V
CC
Min.
I
OH
=-1 mA
10 % V
CC
Max.
I
OL
= 1 mA
F:
±20
× 10
-6
15 pF Max.
80 % V
CC
Min.
20 % V
CC
Max.
4 ns Max.
3 ns Max.
7 ns Max
3 ms Max.
±3 ×
10
-6
/ year Max.
(Unit:mm)
ST
terminal
+85
°C
20 % V
CC
to 80 % V
CC
level,L_CMOS=15 pF
+105
°C,+125 °C
t=0 at 90 % V
CC
(+105 °C,+125 °C : 5 ms Max.)
t
r
/
t
f
t_str
f_aging
5 ns Max.
+25 °C, First year,
V
CC
=1.5 V,1.8 V, 2.5 V, 3.3 V
External dimensions
2.5±0.15
#4
#3
#3
Footprint (Recommended)
C
(ex. 0.01 µF)
(Unit:mm)
#4
Resist
0.7 0.6
27.00B
B631A
#1
#2
2.0±0.15
#4
1.1
#3
#2
Pin map
Pin
1
2
3
4
0.9
0.8
#1
0.8±0.1
Connection
ST
GND
OUT
V
CC
1.3
#1
#2
1.7
To maintain stable operation, provide by-pass capacitor with
more than 0.1
µF
at a location as near as possible to the power
source terminal of the crystal products (between V
CC
- GND).
Note.
ST
pin = HIGH or "open" : Specified frequency output.
ST
pin = LOW : Output is high impedance, oscillation stops.
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