EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

2N5011

Description
Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size99KB,1 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric Compare View All

2N5011 Online Shopping

Suppliers Part Number Price MOQ In stock  
2N5011 - - View Buy Now

2N5011 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN

2N5011 Parametric

Parameter NameAttribute value
Parts packaging codeTO-5
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codecompli
Maximum collector current (IC)0.5 A
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)35 MHz
Base Number Matches1

2N5011 Related Products

2N5011 2N5012
Description Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN
Parts packaging code TO-5 TO-5
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Contacts 3 3
Reach Compliance Code compli compli
Maximum collector current (IC) 0.5 A 0.5 A
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 30 30
JEDEC-95 code TO-5 TO-5
JESD-30 code O-MBCY-W3 O-MBCY-W3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 175 °C 175 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 2 W 2 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 35 MHz 35 MHz
Base Number Matches 1 1

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号