Transistor
Parameter Name | Attribute value |
package instruction | , |
Reach Compliance Code | compli |
Maximum collector current (IC) | 12 A |
Configuration | Single |
Minimum DC current gain (hFE) | 15 |
Maximum operating temperature | 200 °C |
Polarity/channel type | NPN |
Maximum power dissipation(Abs) | 57.2 W |
surface mount | NO |
Nominal transition frequency (fT) | 1.5 MHz |
Base Number Matches | 1 |
2N6569 | 2N3236 | 2N3667 | 2N5881 | 2N6594 | 2N6472 | |
---|---|---|---|---|---|---|
Description | Transistor | Power Bipolar Transistor, 15A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN | Transistor, TO3-3 | Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | Transistor, | Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, |
Reach Compliance Code | compli | compli | compli | compli | compli | compli |
Maximum collector current (IC) | 12 A | 15 A | 15 A | 15 A | 12 A | 15 A |
Configuration | Single | SINGLE | Single | SINGLE | Single | SINGLE |
Minimum DC current gain (hFE) | 15 | 17 | 15 | 20 | 15 | 20 |
Maximum operating temperature | 200 °C | 175 °C | 175 °C | 200 °C | 175 °C | 200 °C |
Polarity/channel type | NPN | NPN | NPN | NPN | PNP | NPN |
Maximum power dissipation(Abs) | 57.2 W | 150 W | 117 W | 160 W | 100 W | 71 W |
surface mount | NO | NO | NO | NO | NO | NO |
Nominal transition frequency (fT) | 1.5 MHz | 0.8 MHz | 0.5 MHz | 4 MHz | 2.5 MHz | 10 MHz |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |