NDB608B/L86Z datasheet, PDF - EEWORLD Datasheet

NDB608B/L86Z: Description32A, 80V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB; CategoryDiscrete semiconductor The transistor; File Size71KB，1 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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NDB608B/L86Z Overview

32A, 80V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

Parameter Name	Attribute value
Maker	Texas Instruments
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	80 V
Maximum drain current (ID)	32 A
Maximum drain-source on-resistance	0.045 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	100 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Transistor component materials	SILICON

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