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Datasheet> All Categories > Discrete semiconductor> The transistor> NEM091203P-28-A
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NEM091203P-28-A

Description
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, T-97M, 8 PIN
CategoryDiscrete semiconductor    The transistor   
File Size90KB，11 Pages
ManufacturerNEC Electronics
Environmental Compliance
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NEM091203P-28-A Overview

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, T-97M, 8 PIN

NEM091203P-28-A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNEC Electronics
package instructionLEAD FREE, PLASTIC, T-97M, 8 PIN
Reach Compliance Codecompliant
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
Maximum drain current (ID)12 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDFM-F8
JESD-609 codee6
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

NEM091203P-28-A Preview

DATA SHEET
LDMOS FIELD EFFECT TRANSISTOR
NEM091203P-28
N-CHANNEL SILICON POWER LDMOS FET
FOR 135 W UHF-BAND SINGLE-END POWER AMPLIFIER
DESCRIPTION
The NEM091203P-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for 850 to 960 MHz
applications, such as, GSM/EDGE/N-CDMA cellular base station.
metallization offer a high degree of reliability.
Dies are manufactured using our NEWMOS
technology (our WSi gate lateral MOS FET), and its nitride surface passivation and quadruple layer aluminum silicon
FEATURES
• High 1 dB compression output power : P
O (1 dB)
= 135 W TYP. (V
DS
= 28 V, I
Dset
= 1 200 mA,
f = 850 to 960 MHz CW)
• High linear gain
• High drain efficiency
• Low intermodulation distortion
: G
L
= 17.0 dB TYP. (V
DS
= 28 V, I
Dset
= 1 200 mA, f = 850 to 960 MHz CW)
:
η
d
= 58% TYP. (V
DS
= 28 V, I
Dset
= 1 200 mA, f = 850 to 960 MHz CW)
: IM
3
=
−40
dBc TYP. (V
DS
= 28 V, I
Dset
= 1 200 mA, f = 960/960.1 MHz,
P
out
= 45 dBm (2 tones) )
: IM
3
=
−40
dBc TYP. (V
DS
= 28 V, I
Dset
= 1 200 mA, f = 880/880.1 MHz,
P
out
= 45 dBm (2 tones) )
• Internal matched (Input and Output) for ease of use
• Low cost hollow plastic packages
• 100% screening
• Integrated ESD protection
• Effective prevention against humidity
• Excellent stability against HCI (Hot Carrier Injection)
APPLICATION
• Digital cellular base station PA : GSM/EDGE/N-CDMA etc.
ORDERING INFORMATION
Part Number
NEM091203P-28
Order Number
NEM091203P-28-A
Package
T-97M (3P) (Pb-Free)
Supplying Form
ESD protective envelope
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 1 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10539EJ01V0DS (1st edition)
Date Published June 2005 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 2005
NEM091203P-28
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C, unless otherwise specified)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Device Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
P
tot
T
ch
T
stg
Ratings
65
±7
12
292
200
−65
to +150
Unit
V
V
A
W
°C
°C
THERMAL RESISTANCE (T
A
= +25°C)
Parameter
Thermal Resistance
(Channel to case)
Symbol
R
th (ch-c)
Test Conditions
MIN.
−
TYP.
0.54
MAX.
0.6
Unit
°C/W
RECOMMENDED OPERATING RANGE
Parameter
Drain to Source Voltage
Gate to Source Voltage
Input Power
Symbol
V
DS
V
GS
P
in
MIN.
−
2.5
−
TYP.
28
3.0
35
MAX.
30
4.0
38
Unit
V
V
dBm
2
Data Sheet PU10539EJ01V0DS
NEM091203P-28
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Gate to Source Leak Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Transconductance
Drain to Source Breakdown Voltage
RF Characteristics
Output Power
Gain 1 dB Compression Output Power
Drain Efficiency
Power Added Efficiency
Linear Gain
3rd Order Intermodulation Distortion
P
out
P
O (1 dB)
f = 920 to 960 MHz, P
in
= 35 dBm,
V
DS
= 28 V, I
Dset
= 1 200 mA
50.8
−
50
−
P
in
= 25 dBm
f = 960/960.1 MHz, V
DS
= 28 V,
I
Dset
= 1 200 mA, 2 tones P
out
= 45 dBm
Output Power
Gain 1 dB Compression Output Power
Drain Efficiency
Power Added Efficiency
Linear Gain
3rd Order Intermodulation Distortion
P
out
P
O (1 dB)
f = 880 MHz, P
in
= 35 dBm,
V
DS
= 28 V, I
Dset
= 1 200 mA
−
−
−
−
P
in
= 29 dBm
f = 880/880.1 MHz, V
DS
= 28 V,
I
Dset
= 1 200 mA, 2 tones P
out
= 45 dBm
−
−
52.0
51.8
60
58
17.0
−40
−
−
−
−
−
−
dBm
dBm
%
%
dB
dBc
16.5
−
51.3
51.3
58
57
18.0
−40
−
−
−
−
−
−
dBm
dBm
%
%
dB
dBc
V
th
g
m
BV
DSS
V
DS
= 10 V, I
DS
= 1 mA
V
DS
= 20 V, I
DS
= 1.2±0.1 A
I
DSS
= 10
µ
A
1.7
−
65
2.2
5.6
75
2.8
−
−
V
S
V
I
GSS
I
DSS
V
GSS
= 5V
V
DSS
= 65 V
−
−
−
−
1
1
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
µ
A
mA
η
d
η
add
G
L
IM
3
η
d
η
add
G
L
IM
3
Data Sheet PU10539EJ01V0DS
3
NEM091203P-28
TYPICAL CHARACTERISTICS (T
A
= +25°C, V
DS
= 28 V, I
Dset
= 1 200 mA, unless otherwise specified)
GAIN, DRAIN EFFICIENCY vs. OUTPUT POWER
19
V
DS
= 24 V
26 V
28 V
18
30 V
17
Gain (dB)
GAIN, DRAIN EFFICIENCY vs. OUTPUT POWER
20
V
DS
= 24 V
26 V
28 V
19
30 V
f = 940 MHz
Gain
50
40
70
60
Drain Efficiency
η
d
(%)
Drain Efficiency
η
d
(%)
Drain Efficiency
η
d
(%)
70
Gain
60
Drain Efficiency
η
d
(%)
50
40
18
Gain (dB)
16
15
14
13
12
30
35
40
45
17
16
15
14
13
30
35
40
45
50
η
d
30
20
10
f = 880 MHz
0
50
55
η
d
30
20
10
0
55
Output Power P
out
(dBm)
Output Power P
out
(dBm)
GAIN, DRAIN EFFICIENCY vs. OUTPUT POWER
19
18
17
Gain (dB)
GAIN, DRAIN EFFICIENCY vs. OUTPUT POWER
20
I
Dset
= 0.8 A
1.0 A
1.2 A
19
1.4 A
1.6 A
18
Gain (dB)
f = 880 MHz
Gain
70
60
Drain Efficiency
η
d
(%)
f = 940 MHz
Gain
70
60
50
40
50
40
16
15
14
13
12
30
35
40
I
Dset
= 0.8 A
1.0 A
1.2 A
1.4 A
1.6 A
45
50
17
16
15
14
13
30
35
40
45
50
η
d
30
20
10
0
55
η
d
30
20
10
0
55
Output Power P
out
(dBm)
3rd/5th Order Intermodulation Distortion IM
3
/IM
5
(dBc)
3rd/5th Order Intermodulation Distortion IM
3
/IM
5
(dBc)
Output Power P
out
(dBm)
IM
3
/IM
5
, DRAIN EFFICIENCY
vs. AVERAGE OUTPUT POWER
0
–10
–20
–30
–40
IM
3
–50
–60
–70
33
36
IM
5
39
42
f = 860 MHz
870 MHz
880 MHz
890 MHz
45
48
10
0
–10
51
V
DS
= 28 V, CW Two Tone,
Tone Spacing = 2.5 MHz
60
50
Drain Efficiency
η
d
(%)
IM
3
/IM
5
, DRAIN EFFICIENCY
vs. AVERAGE OUTPUT POWER
0
–10
–20
–30
–40
–50
–60
–70
33
36
IM
5
39
42
f = 920 MHz
940 MHz
960 MHz
45
48
IM
3
V
DS
= 28 V, CW Two Tone,
Tone Spacing = 2.5 MHz
60
η
d
50
40
30
20
10
0
–10
51
η
d
40
30
20
Average Output Power P
out
(dBm)
Average Output Power P
out
(dBm)
Remark
The graphs indicate nominal characteristics.
4
Data Sheet PU10539EJ01V0DS
NEM091203P-28
3rd/5th Order Intermodulation Distortion IM
3
/IM
5
(dBc)
3rd/5th Order Intermodulation Distortion IM
3
/IM
5
(dBc)
IM
3
/IM
5
, DRAIN EFFICIENCY
vs. AVERAGE OUTPUT POWER
V
DS
= 28 V, f
C
= 880 MHz,
CW Two Tone,
–10
Tone Spacing = 2.5 MHz
–20
–30
–40
–50
–60
–70
33
36
39
IM
5
I
Dset
= 0.8 A
1.0 A
1.2 A
1.4 A
1.6 A
45
48
IM
3
0
60
50
Drain Efficiency
η
d
(%)
IM
3
/IM
5
, DRAIN EFFICIENCY
vs. AVERAGE OUTPUT POWER
V
DS
= 28 V, f
C
= 940 MHz,
CW Two Tone,
–10
Tone Spacing = 2.5 MHz
–20
–30
IM
3
–40
–50
–60
–70
33
36
39
IM
5
I
Dset
= 0.8 A
1.0 A
1.2 A
1.4 A
1.6 A
45
48
20
10
0
–10
51
0
60
50
η
d
40
30
20
10
0
–10
51
η
d
40
30
42
42
Average Output Power P
out
(dBm)
Average Output Power P
out
(dBm)
GAIN, DRAIN EFFICIENCY vs. FREQUENCY
19
V
DS
= 28 V
90
GAIN, DRAIN EFFICIENCY vs. FREQUENCY
19
18
Drain Efficiency
η
d
(%)
V
DS
= 28 V
60 W Gain
90
80
70
Drain Efficiency
η
d
(%)
Drain Efficiency
η
d
(%), Gain (dB)
Error Vector Magnitude EVM (%rms)
18
70 W Gain
Gain (dB)
80
17
Gain (dB)
17
140 W Gain
16
140 W
η
d
70
130 W Gain
16
130 W
η
d
15
14
13
920
50
40
30
960
60
60
15
70 W
η
d
50
60 W
η
d
930
940
Frequency f (MHz)
950
14
40
845 850 855 860 865 870 875 880 885 890
Frequency f (MHz)
ACLR, DRAIN EFFICIENCY, GAIN
vs. AVERAGE OUTPUT POWER
–20
Drain Efficiency
η
d
(%), Gain (dB)
SPECTRUM REGROWTH,
η
d
, GAIN
EVM vs. AVERAGE OUTPUT POWER
60
50
40
–30
EDGE SIGNAL
V
DS
= 28 V,
–40 I
Dset
= 1.0 A,
f = 960 MHz
–50
–60
400 kHz
–70
–80
–90
40
Gain
600 kHz
EVM
48
20
10
0
50
60
50
40
30
Spectrum Regrowth (dBc)
ACLR (dBc)
N-CDMA Signal
V
DS
= 28 V, f
C
= 867.5 MHz,
–30
N-CDMA (IS95) Mod :
CDMA set up 9 CH
Chip rate 1.228800 Mcps
Clipping 100%
–40
η
d
η
d
–50
–60
–70
–80
33
ACLR±750 kHz
Gain
I
Dset
= 0.8 A
ACLR
1.0 A
±1.98
MHz
1.2 A
45
42
48
30
20
10
0
51
36
39
42
44
46
Average Output Power P
out
(dBm)
Average Output Power P
out
(dBm)
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10539EJ01V0DS
Drain Efficiency
η
d
(%)
5
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