BZX84-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
3
• Silicon planar Zener diodes
• The Zener voltages are graded according to the
international E24 standard. Standard Zener
voltage tolerance is ± 5 %, indicated by the “C”
in the ordering code. Replace “C” with “B” for
± 2 % tolerance.
• AEC-Q101 qualified available
• ESD capability acc. to AEC-Q101:
human body model: > 8 kV,
machine model: > 800 V
UNIT
V
mA
Available
1
2
20421
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.4 to 75
2; 5
Pulse current
Single
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
BZX84C2V4-E3-08 to BZX84C75-E3-08
BZX84B2V4-E3-08 to BZX84B75-E3-08
BZX84C2V4-HE3-08 to BZX84C75-HE3-08
BZX84-series
BZX84B2V4-HE3-08 to BZX84B75-HE3-08
BZX84C2V4-E3-18 to BZX84C75-E3-18
BZX84B2V4-E3-18 to BZX84B75-E3-18
BZX84C2V4-HE3-18 to BZX84C75-HE3-18
BZX84B2V4-HE3-18 to BZX84B75-HE3-18
10 000 (8 mm tape on 13" reel)
10 000
3000 (8 mm tape on 7" reel)
15 000
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
PACKAGE
PACKAGE NAME
SOT-23
WEIGHT
8.8 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Power dissipation
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Operating temperature range
TEST CONDITION
T
amb
= 25 °C, device on fiberglass substrate,
acc. layout on page 7
T
amb
= 25 °C, device on fiberglass substrate,
acc. layout on page 7
SYMBOL
P
tot
R
thJA
T
j
T
stg
T
op
VALUE
300
420
150
-65 to +150
-55 to +150
UNIT
mW
K/W
°C
°C
°C
Rev. 2.1, 08-Nov-16
Document Number: 85763
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZX84-Series
www.vishay.com
Vishay Semiconductors
REVERSE
LEAKAGE
CURRENT
I
R
at V
R
μA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
V
MAX.
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
150
170
180
200
215
240
255
DYNAMIC
RESISTANCE
f = 1 kHz
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
MAX.
275
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
375
375
400
425
450
475
500
-9
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
9
9
10
10
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
PART
NUMBER
MARKING
CODE
MIN.
BZX84C2V4
BZX84C2V7
BZX84C3V0
BZX84C3V3
BZX84C3V6
BZX84C3V9
BZX84C4V3
BZX84C4V7
BZX84C5V1
BZX84C5V6
BZX84C6V2
BZX84C6V8
BZX84C7V5
BZX84C8V2
BZX84C9V1
BZX84C10
BZX84C11
BZX84C12
BZX84C13
BZX84C15
BZX84C16
BZX84C18
BZX84C20
BZX84C22
BZX84C24
BZX84C27
BZX84C30
BZX84C33
BZX84C36
BZX84C39
BZX84C43
BZX84C47
BZX84C51
BZX84C56
BZX84C62
BZX84C68
BZX84C75
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
Y10
Y11
Y12
Y13
Y14
Y15
Y16
Y17
Y18
Y19
Y20
Y21
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
V
Z
at I
ZT1
V
NOM.
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
MAX.
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
TEST CURRENT
I
ZT1
mA
I
ZT2
TEMPERATURE
COEFFICIENT
VZ
at I
ZT1
10
-4
/°C
MIN.
MAX.
-4
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
11
12
12
12
Rev. 2.1, 08-Nov-16
Document Number: 85763
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZX84-Series
www.vishay.com
Vishay Semiconductors
REVERSE
LEAKAGE
CURRENT
I
R
at V
R
μA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
V
MAX.
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14
15.4
16.8
18.9
21
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
150
170
180
200
215
240
255
DYNAMIC
RESISTANCE
f = 1 kHz
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
MAX.
275
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
375
375
400
425
450
475
500
-9
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
9
9
10
10
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
PART
NUMBER
MARKING
CODE
MIN.
BZX84B2V4
BZX84B2V7
BZX84B3V0
BZX84B3V3
BZX84B3V6
BZX84B3V9
BZX84B4V3
BZX84B4V7
BZX84B5V1
BZX84B5V6
BZX84B6V2
BZX84B6V8
BZX84B7V5
BZX84B8V2
BZX84B9V1
BZX84B10
BZX84B11
BZX84B12
BZX84B13
BZX84B15
BZX84B16
BZX84B18
BZX84B20
BZX84B22
BZX84B24
BZX84B27
BZX84B30
BZX84B33
BZX84B36
BZX84B39
BZX84B43
BZX84B47
BZX84B51
BZX84B56
BZX84B62
BZX84B68
BZX84B75
Z50
Z51
Z52
Z53
Z54
Z55
Z56
Z57
Z58
Z59
Z60
Z61
Z62
Z63
Z64
Z65
Z66
Z67
Z68
Z69
Z70
Z71
Z72
Z73
Z74
Z75
Z76
Z77
Z78
Z79
Z80
Z81
Z82
Z83
Z84
Z85
Z86
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.0
5.49
6.08
6.66
7.35
8.04
8.92
9.8
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50
54.9
60.8
66.6
73.5
V
Z
at I
ZT1
V
NOM.
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
MAX.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.2
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52
57.1
63.2
69.4
76.5
TEST CURRENT
I
ZT1
mA
I
ZT2
TEMPERATURE
COEFFICIENT
VZ
at I
ZT1
10
-4
/°C
MIN.
MAX.
-4
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
11
12
12
12
Rev. 2.1, 08-Nov-16
Document Number: 85763
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZX84-Series
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
mA
10
3
10
2
Ω
100
T
J
= 25 °C
5
4
Vishay Semiconductors
I
F
10
1
10
-1
10
-2
10
-3
10
-4
10
-5
0
18114
T
J
= 100 °C
r
zj
3
2
33
27
22
18
15
12
10
6.8/8.2
6.2
T
J
= 25 °C
10
5
4
3
2
1
0.2
0.4
0.6
0.8
1V
0.1
18119
2
5
1
2
5
V
F
10
I
Z
2
5
100 mA
Fig. 1 - Forward Characteristics
Fig. 4 - Dynamic Resistance vs. Zener Current
mW
500
Ω
10
3
7
5
4
T
j
= 25 °C
400
R
zj
3
2
P
tot
300
47 + 51
43
39
36
10
2
7
200
5
4
3
2
100
0
0
18115
100
200 °C
10
0.1
18120
2
3
4 5
1
2
3 4 5
T
amb
I
Z
10
mA
Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 5 - Dynamic Resistance vs. Zener Current
Ω
1000
5
4
3
2
Ω
10
3
T
J
= 25 °C
5
4
3
2
R
zth
= R
thA
x V
Z
x
Δ
V
Z
Δ
T
j
r
zj
R
zth
100
5
4
3
2
10
2
5
4
3
2
10
5
4
3
2
2.7
3.6
4.7
5.1
5.6
10
5
4
3
2
negative
positive
1
0.1
18117
2
5
1
1
18121
2
3
4 5
1
2
5
10
I
Z
2
5
100 mA
10
2
3 4 5
100 V
V
Z
at I
Z
= 5 mA
Fig. 3 - Dynamic Resistance vs. Zener Current
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
Rev. 2.1, 08-Nov-16
Document Number: 85763
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZX84-Series
www.vishay.com
Vishay Semiconductors
mV/°C
100
I
Z
= 5 mA
Ω
100
7
5
4
R
zj
3
2
Δ
V
Z
Δ
T
j
80
60
10
7
5
4
3
2
40
20
T
j
= 25 °C
I
Z
= 5 mA
1
2
3
4 5
1
10
2
0
0
18125
3 4 5
100 V
20
40
60
80
100 V
18122
V
Z
V
Z
Fig. 7 - Dynamic Resistance vs. Zener Voltage
Fig. 10 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
V
9
8
mV/°C
25
20
15
10
5
0
-5
1
18123
2
3
4 5
Δ
V
Z
Δ
T
j
5 mA
I
Z
= 1 mA
20 mA
7
Δ
V
Z
6
5
4
3
2
1
0
-1
51
43
36
I
Z
= 2 mA
0
20
40
60
80 100 120
T
j
140 °C
10
2
3 4 5
100 V
V
Z
18126
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
Fig. 11 - Change of Zener Voltage vs. Junction Temperature
V
0.8
0.7
0.6
V
Z
at I
Z
= 5 mA
25
15
10
V
1.6
1.4
1.2
Δ
V
Z
= R
zth
x I
Z
Δ
V
Z
0.5
0.4
0.3
0.2
0.1
0
-1
- 0.2
0
18124
3.6
4.7
8
7
6.2
5.9
5.6
5.1
Δ
V
Z
1
0.8
0.6
0.4
0.2
0
- 0.2
- 0.4
20
40
60
80
100 120 140 C
18127
1
2
3
4 5
10
2
3 4 5
100 V
T
j
V
Z
at I
Z
= 5 mA
Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
Rev. 2.1, 08-Nov-16
Document Number: 85763
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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