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M5M4V4100J-8

Description
Fast Page DRAM, 4MX1, 80ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20
Categorystorage    storage   
File Size746KB,21 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

M5M4V4100J-8 Overview

Fast Page DRAM, 4MX1, 80ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20

M5M4V4100J-8 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMitsubishi
Parts packaging codeSOJ
package instructionSOJ, SOJ20/26,.34
Contacts20
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time80 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeSEPARATE
JESD-30 codeR-PDSO-J20
JESD-609 codee0
length17.15 mm
memory density4194304 bit
Memory IC TypeFAST PAGE DRAM
memory width1
Number of functions1
Number of ports1
Number of terminals20
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX1
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ20/26,.34
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle1024
Maximum seat height3.55 mm
self refreshNO
Maximum standby current0.0005 A
Maximum slew rate0.05 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm
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