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IS61NVP12836B-200TQ

Description
128KX36 ZBT SRAM, 3.1ns, PQFP100, TQFP-100
Categorystorage    storage   
File Size505KB,29 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
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IS61NVP12836B-200TQ Overview

128KX36 ZBT SRAM, 3.1ns, PQFP100, TQFP-100

IS61NVP12836B-200TQ Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIntegrated Silicon Solution ( ISSI )
Parts packaging codeQFP
package instructionTQFP-100
Contacts100
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time3.1 ns
Other featuresPIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
JESD-609 codee0
length20 mm
memory density4718592 bit
Memory IC TypeZBT SRAM
memory width36
Humidity sensitivity level3
Number of functions1
Number of terminals100
word count131072 words
character code128000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.5 V
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum standby current0.03 A
Minimum standby current2.38 V
Maximum slew rate0.2 mA
Maximum supply voltage (Vsup)2.625 V
Minimum supply voltage (Vsup)2.375 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm
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