SFA801G - SFA808G
8A Glass-passivated Super-fast Rectifiers
PRODUCT SUMMARY
Voltage range 50 to 600 Volts
Single diode in TO-220A package
Rated 8.0 Amps at Tc=100°C
TO-220A
.185(4.70)
.175(4.44)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
.055(1.40)
.045(1.14)
FEATURES
Low forward voltage drop
High current capability
High reliability
High surge current capability
.113(2.87)
.103(2.62)
PIN1
.16(4.06)
.14(3.56)
2
.11(2.79)
.10(2.54)
.56(14.22)
.53(13.46)
MECHANICAL DATA
Case: TO-220A molded plastic
Epoxy: UL 94V-O rate flame retardant
Terminals:
matte-Sn
plated
Polarity:
as
marked
High temperature soldering guaranteed:
260 C
for
10 seconds
at 0.25”
(6.35mm) from case.
Weight: 2.24 grams
0
.037(0.94)
.027(0.68)
.205(5.20)
.195(4.95)
.025(0.64)
.014(0.35)
PIN 1
PIN 2
CASE
Case Positive
Dimensions in inches and (millimeters)
Pb-free, RoHS compliant.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Maximum
recurrent peak reverse
voltage
Maximum RMS
voltage
Maximum DC
blocking voltage
Maximum
average forward rectified current
at
T
C
= 100°C
Peak
forward surge current,
8.3 ms,
single
half sine-wave superimposed
on
rated load
(JEDEC method )
Maximum
instantaneous forward voltage
at
8.0A
Maximum DC
reverse current
at
rated
DC
blocking voltage at T
A
=25°C
at
T
A
=100°C
Maximum
reverse recovery time
(Note 1)
Typical
junction capacitance
(Note 2)
Typical
thermal resistance
(Note 3)
Operating
temperature range
Storage
temperature range
Symbol
SFA SFA SFA SFA SFA SFA SFA SFA
801G 802G 803G 804G 805G 806G 807G 808G
Units
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
50
35
50
100 150 200 300 400 500 600
70 105 140 210 280 350 420
100 150 200 300 400 500 600
8.0
125
0.975
10
400
35
100
4.0
-65 to +150
-65 to +150
60
1.3
1.7
V
uA
uA
ns
pF
°C/W
°C
°C
Cj
R
θ
JC
T
J
T
STG
Notes:
1
.
Reverse
recovery t
est
conditions:
I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz
with an applied reverse voltage
of 4.0 V D.C.
3. Mounted on
a heatsink, an aluminum plate
of 2in. x 3 in. x 0.25 in.
3/16/2006 Rev.3.01
www.SiliconStandard.com
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SFA801G - SFA808G
RATINGS AND CHARACTERISTIC CURVES
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
+0.5A
(-)
DUT
(+)
50Vdc
(approx)
(-)
PULSE
GENERATOR
(NOTE 2)
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
0
-0.25A
trr
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
AVERAGE FORWARD CURRENT. (A)
10
8
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.3- TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT. ( A)
TC=100
0
C
o
6
4
2
0
100
10
0
50
CASE TEMPERATURE. ( C)
o
100
150
TC=25
0
C
PEAK FORWARD SURGE CURRENT. (A)
FIG.4- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
TC=125
0
C
1.0
120
8.3ms Single Half Sine Wave
JEDEC Method
0.1
0
20
40
60
80
100
120
140
90
60
30
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL FORWARD CHARACTERISTICS
100
30
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
INSTANTANEOUS FORWARD CURRENT. (A)
10
SF
A8
01
SF
G~
A8
SF
05
A8
G~
04
G
SF
A8
06
SF
G
A8
07
G~
SF
A8
08
G
Tj=25
o
C
Pulse Width=300 s
1% Duty Cycle
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
Tj=25
0
C
3.0
1.0
90
A8
SF
CAPACITANCE.(pF)
01
80
70
60
50
0.3
0.1
G
~S
8
FA
04
A8
SF
05
G
~S
8
FA
08
G
G
.03
.01
.4
1
2
5
10
20
50
100
200
500
.6
.8
1.0
1.2
1.4
1.6
1.8
REVERSE VOLTAGE. (V)
FORWARD VOLTAGE. (V)
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
3/16/2006 Rev.3.01
www.SiliconStandard.com
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