UPS360e3
3 A Schottky Barrier Rectifier
DESCRIPTION
KEY FEATURES
WWW .
Microsemi
.C
OM
This UPS360e3 in the Powermite3
®
package is a high efficiency Schottky rectifier
that is also RoHS compliant offering high current/power capabilities previously
found only in much larger packages. They are ideal for SMD applications that
operate at high frequencies. In addition to its size advantages, the Powermite3
®
package includes a full metallic bottom that eliminates the possibility of solder flux
entrapment during assembly and a unique locking tab act as an efficient heat path to
the heat-sink mounting. Its innovative design makes this device ideal for use with
automatic insertion equipment.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on Rated Load
Storage Temperature
Junction Temperature
Symbol
V
RRM
V
RWM
V
R
V
R (RMS)
I
o
I
FSM
T
STG
T
J
Value
Unit
60
42
3
100 @ 25ºC
50 @ 100ºC
-55 to +150
-55 to +125
V
V
A
A
ºC
ºC
Very low thermal resistance package
RoHS Compliant with e3 suffix part number
Guard-ring-die construction for transient
protection
Efficient heat path with Integral locking bottom
metal tab
Low forward voltage
Full metallic bottom eliminates flux entrapment
Compatible with automatic insertion
Low profile-maximum height of 1mm
Options for screening in accordance with MIL-
PRF-19500 for JAN, JANTX, JANTXV, and
JANS are available by adding MQ, MX, MV, or
MSP prefixes respectively to part numbers.
For example, designate MXUPS360e3 for a
JANTX (consult factory for Tin-Lead plating).
Optional 100% avionics screening available by
adding MA prefix for 100% temperature cycle,
thermal impedance and 24 hours HTRB
(consult factory for Tin-Lead plating)
APPLICATIONS/BENEFITS
Switching and Regulating Power Supplies.
Silicon Schottky (hot carrier) rectifier for
minimal reverse voltage recovery
Elimination of reverse-recovery oscillations
to reduce need for EMI filtering
Charge Pump Circuits
Reduces reverse recovery loss with low I
RM
Small foot print
190 X 270 mils (1:1 Actual size)
See mounting pad details on pg 3
THERMAL CHARACTERISTICS
Thermal Resistance
Junction-to-case (bottom)
Junction to ambient (1)
R
θJC
R
θJA
3.2
65
ºC/ Watt
ºC/ Watt
MECHANICAL & PACKAGING
(1) When mounted on FR-4 PC board using 2 oz copper with recommended minimum foot print
Powermite 3™
•
CASE: Void-free transfer molded
thermosetting epoxy compound meeting
UL94V-0
•
FINISH: Annealed matte-Tin plating over
copper and readily solderable per MIL-
STD-750 method 2026 (consult factory for
Tin-Lead plating)
•
POLARITY: See figure (left)
•
MARKING: S360•
•
WEIGHT: 0.072 gram (approx.)
•
Package dimension on last page
•
Tape & Reel option: 16 mm tape per
Standard EIA-481-B, 5000 on 13” reel
UPS360E3
UPS360E3
Copyright
©
2005
5-19-05 Rev A
Microsemi
Page 1
UPS360e3
3 A Schottky Barrier Rectifier
WWW .
Microsemi
.C
OM
Notes: 2. T
A
= T
SOLDERING POINT,
R
ΘJS
= 3.2º C/W R
ΘSA
= 0º C/W.
3. Device mounted on GETEK substrate, 2" x 2", 2 oz. copper , double-sided , cathode
pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". R
ΘJA
in range of
20-40° C/W.
4. Device mounted on FRA-4 substrate, 2" x 2", 2 oz. copper, single-sided, pad layout
R
ΘJA
in range of 65° C/W. See mounting pad below.
5. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 3.
6. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 4.
PAD LAYOUT
inches [mm]
UPS360E3
UPS360E3
Copyright
©
2005
5-19-05 Rev A
Microsemi
Page 3