MT9VDDT6472AY-40BXX datasheet, PDF

MT9VDDT6472AY-40BXX: DescriptionDDR DRAM Module, 64MX72, 0.7ns, CMOS, LEAD FREE, MO-206, DIMM-184; Categorystorage storage; File Size475KB，16 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/; Environmental Compliance

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MT9VDDT6472AY-40BXX Overview

DDR DRAM Module, 64MX72, 0.7ns, CMOS, LEAD FREE, MO-206, DIMM-184

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Micron Technology
Parts packaging code	DIMM
package instruction	DIMM,
Contacts	184
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	0.7 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-XDMA-N184
JESD-609 code	e4
length	133.35 mm
memory density	4831838208 bit
Memory IC Type	DDR DRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	184
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX72
Package body material	UNSPECIFIED
encapsulated code	DIMM
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum seat height	3.18 mm
self refresh	YES
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.5 V
Nominal supply voltage (Vsup)	2.6 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Gold (Au)
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	31.75 mm

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