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M34D64-RMN1

Description
8KX8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SO-8
Categorystorage    storage   
File Size119KB,15 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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M34D64-RMN1 Overview

8KX8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SO-8

M34D64-RMN1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeSOIC
package instruction0.150 INCH, PLASTIC, SO-8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum clock frequency (fCLK)0.4 MHz
Data retention time - minimum40
Durability1000000 Write/Erase Cycles
I2C control byte1010DDDR
JESD-30 codeR-PDSO-G8
JESD-609 codee4
length4.9 mm
memory density65536 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals8
word count8192 words
character code8000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8KX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
power supply2/3.3 V
Certification statusNot Qualified
Maximum seat height1.75 mm
Serial bus typeI2C
Maximum standby current0.000001 A
Maximum slew rate0.0008 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)1.8 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
width3.9 mm
Maximum write cycle time (tWC)10 ms
write protectHARDWARE
M34D64
M34D32
64/32 Kbit Serial I²C Bus EEPROM
With Hardware Write Control on Top Quarter of Memory
PRELIMINARY DATA
s
s
Compatible with I
2
C Extended Addressing
Two Wire I
2
C Serial Interface
Supports 400 kHz Protocol
Single Supply Voltage:
– 4.5V to 5.5V for M34Dxx
– 2.5V to 5.5V for M34Dxx-W
– 1.8V to 3.6V for M34Dxx-R
s
8
1
PSDIP8 (BN)
0.25 mm frame
s
Hardware Write Control of the top quarter of
memory
BYTE and PAGE WRITE (up to 32 Bytes)
RANDOM and SEQUENTIAL READ Modes
Self-Timed Programming Cycle
Automatic Address Incrementing
Enhanced ESD/Latch-Up Behavior
More than 1 Million Erase/Write Cycles
More than 40 Year Data Retention
s
s
s
s
s
s
s
8
1
SO8 (MN)
150 mil width
DESCRIPTION
These electrically erasable programmable
memory (EEPROM) devices are fabricated with
STMicroelectronics’ High Endurance, CMOS
technology. This guarantees an endurance
typically well above one million Erase/Write
cycles, with a data retention of 40 years. The
memories are organized as 8192x8 bits (M34D64)
and 4096x8 bits (M34D32), and operate down to
Figure 1. Logic Diagram
VCC
Table 1. Signal Names
E0, E1, E2
SDA
Chip Enable Inputs
Serial Data/Address Input/
Output
Serial Clock
Write Control
Supply Voltage
Ground
3
E0-E2
SCL
WC
M34D64
M34D32
SDA
SCL
WC
V
CC
V
SS
VSS
AI02850
May 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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