|
X24022DM |
X24022DMB-3 |
X24022DMB |
X24022DM-3 |
X24022DM-2.7 |
X24022DI-2.7 |
X24022DI-3 |
X24022DI |
Description |
EEPROM, 256X8, Serial, CMOS, CDIP8, HERMETIC SEALED, CERDIP-8 |
EEPROM, 256X8, Serial, CMOS, CDIP8, HERMETIC SEALED, CERDIP-8 |
EEPROM, 256X8, Serial, CMOS, CDIP8, HERMETIC SEALED, CERDIP-8 |
EEPROM, 256X8, Serial, CMOS, CDIP8, HERMETIC SEALED, CERDIP-8 |
EEPROM, 256X8, Serial, CMOS, CDIP8, HERMETIC SEALED, CERDIP-8 |
EEPROM, 256X8, Serial, CMOS, CDIP8, HERMETIC SEALED, CERDIP-8 |
EEPROM, 256X8, Serial, CMOS, CDIP8, HERMETIC SEALED, CERDIP-8 |
EEPROM, 256X8, Serial, CMOS, CDIP8, HERMETIC SEALED, CERDIP-8 |
Is it Rohs certified? |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
Maker |
Xicor Inc. |
Xicor Inc. |
Xicor Inc. |
Xicor Inc. |
Xicor Inc. |
Xicor Inc. |
Xicor Inc. |
Xicor Inc. |
package instruction |
HERMETIC SEALED, CERDIP-8 |
HERMETIC SEALED, CERDIP-8 |
HERMETIC SEALED, CERDIP-8 |
HERMETIC SEALED, CERDIP-8 |
HERMETIC SEALED, CERDIP-8 |
HERMETIC SEALED, CERDIP-8 |
HERMETIC SEALED, CERDIP-8 |
HERMETIC SEALED, CERDIP-8 |
Reach Compliance Code |
unknown |
unknown |
unknown |
unknown |
unknown |
unknown |
unknown |
unknown |
Other features |
2 WIRE INTERFACE;PAGE WRITE |
2 WIRE INTERFACE;PAGE WRITE |
2 WIRE INTERFACE;PAGE WRITE |
2 WIRE INTERFACE;PAGE WRITE |
2 WIRE INTERFACE;PAGE WRITE |
2 WIRE INTERFACE;PAGE WRITE |
2 WIRE INTERFACE;PAGE WRITE |
2 WIRE INTERFACE;PAGE WRITE |
Maximum clock frequency (fCLK) |
0.1 MHz |
0.1 MHz |
0.1 MHz |
0.1 MHz |
0.1 MHz |
0.1 MHz |
0.1 MHz |
0.1 MHz |
Data retention time - minimum |
100 |
100 |
100 |
100 |
100 |
100 |
100 |
100 |
Durability |
100000 Write/Erase Cycles |
100000 Write/Erase Cycles |
100000 Write/Erase Cycles |
100000 Write/Erase Cycles |
100000 Write/Erase Cycles |
100000 Write/Erase Cycles |
100000 Write/Erase Cycles |
100000 Write/Erase Cycles |
I2C control byte |
1010DDDR |
1010DDDR |
1010DDDR |
1010DDDR |
1010DDDR |
1010DDDR |
1010DDDR |
1010DDDR |
JESD-30 code |
R-GDIP-T8 |
R-GDIP-T8 |
R-GDIP-T8 |
R-GDIP-T8 |
R-GDIP-T8 |
R-GDIP-T8 |
R-GDIP-T8 |
R-GDIP-T8 |
JESD-609 code |
e0 |
e0 |
e0 |
e0 |
e0 |
e0 |
e0 |
e0 |
memory density |
2048 bit |
2048 bit |
2048 bit |
2048 bit |
2048 bit |
2048 bit |
2048 bit |
2048 bit |
Memory IC Type |
EEPROM |
EEPROM |
EEPROM |
EEPROM |
EEPROM |
EEPROM |
EEPROM |
EEPROM |
memory width |
8 |
8 |
8 |
8 |
8 |
8 |
8 |
8 |
Number of functions |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
Number of terminals |
8 |
8 |
8 |
8 |
8 |
8 |
8 |
8 |
word count |
256 words |
256 words |
256 words |
256 words |
256 words |
256 words |
256 words |
256 words |
character code |
256 |
256 |
256 |
256 |
256 |
256 |
256 |
256 |
Operating mode |
SYNCHRONOUS |
SYNCHRONOUS |
SYNCHRONOUS |
SYNCHRONOUS |
SYNCHRONOUS |
SYNCHRONOUS |
SYNCHRONOUS |
SYNCHRONOUS |
Maximum operating temperature |
125 °C |
125 °C |
125 °C |
125 °C |
125 °C |
85 °C |
85 °C |
85 °C |
Minimum operating temperature |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
-40 °C |
-40 °C |
-40 °C |
organize |
256X8 |
256X8 |
256X8 |
256X8 |
256X8 |
256X8 |
256X8 |
256X8 |
Package body material |
CERAMIC, GLASS-SEALED |
CERAMIC, GLASS-SEALED |
CERAMIC, GLASS-SEALED |
CERAMIC, GLASS-SEALED |
CERAMIC, GLASS-SEALED |
CERAMIC, GLASS-SEALED |
CERAMIC, GLASS-SEALED |
CERAMIC, GLASS-SEALED |
encapsulated code |
DIP |
DIP |
DIP |
DIP |
DIP |
DIP |
DIP |
DIP |
Encapsulate equivalent code |
DIP8,.3 |
DIP8,.3 |
DIP8,.3 |
DIP8,.3 |
DIP8,.3 |
DIP8,.3 |
DIP8,.3 |
DIP8,.3 |
Package shape |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
Package form |
IN-LINE |
IN-LINE |
IN-LINE |
IN-LINE |
IN-LINE |
IN-LINE |
IN-LINE |
IN-LINE |
Parallel/Serial |
SERIAL |
SERIAL |
SERIAL |
SERIAL |
SERIAL |
SERIAL |
SERIAL |
SERIAL |
Peak Reflow Temperature (Celsius) |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
power supply |
5 V |
3.3/5 V |
5 V |
3.3/5 V |
3/5 V |
3/5 V |
3.3/5 V |
5 V |
Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Maximum seat height |
5.08 mm |
5.08 mm |
5.08 mm |
5.08 mm |
5.08 mm |
5.08 mm |
5.08 mm |
5.08 mm |
Serial bus type |
I2C |
I2C |
I2C |
I2C |
I2C |
I2C |
I2C |
I2C |
Maximum standby current |
0.00005 A |
0.00005 A |
0.00005 A |
0.00005 A |
0.00005 A |
0.00005 A |
0.00005 A |
0.00005 A |
Maximum slew rate |
0.002 mA |
0.002 mA |
0.002 mA |
0.002 mA |
0.002 mA |
0.002 mA |
0.002 mA |
0.002 mA |
Maximum supply voltage (Vsup) |
5.5 V |
5.5 V |
5.5 V |
5.5 V |
5.5 V |
5.5 V |
5.5 V |
5.5 V |
Minimum supply voltage (Vsup) |
4.5 V |
3 V |
4.5 V |
3 V |
2.7 V |
2.7 V |
3 V |
4.5 V |
Nominal supply voltage (Vsup) |
5 V |
5 V |
5 V |
5 V |
5 V |
5 V |
5 V |
5 V |
surface mount |
NO |
NO |
NO |
NO |
NO |
NO |
NO |
NO |
technology |
CMOS |
CMOS |
CMOS |
CMOS |
CMOS |
CMOS |
CMOS |
CMOS |
Temperature level |
MILITARY |
MILITARY |
MILITARY |
MILITARY |
MILITARY |
INDUSTRIAL |
INDUSTRIAL |
INDUSTRIAL |
Terminal surface |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Terminal form |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
Terminal pitch |
2.54 mm |
2.54 mm |
2.54 mm |
2.54 mm |
2.54 mm |
2.54 mm |
2.54 mm |
2.54 mm |
Terminal location |
DUAL |
DUAL |
DUAL |
DUAL |
DUAL |
DUAL |
DUAL |
DUAL |
Maximum time at peak reflow temperature |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
width |
7.62 mm |
7.62 mm |
7.62 mm |
7.62 mm |
7.62 mm |
7.62 mm |
7.62 mm |
7.62 mm |
Maximum write cycle time (tWC) |
10 ms |
10 ms |
10 ms |
10 ms |
10 ms |
10 ms |
10 ms |
10 ms |