MT47H16M16BG-3LIT:B datasheet, PDF

MT47H16M16BG-3LIT:B: DescriptionDDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 8 X 14 MM, ROHS COMPLIANT, FBGA-84; Categorystorage storage; File Size9MB，128 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/; Environmental Compliance

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MT47H16M16BG-3LIT:B Overview

DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 8 X 14 MM, ROHS COMPLIANT, FBGA-84

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Micron Technology
Parts packaging code	BGA
package instruction	TFBGA, BGA84,9X15,32
Contacts	84
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.45 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	333 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B84
JESD-609 code	e1
length	14 mm
memory density	268435456 bit
Memory IC Type	DDR DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	84
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	16MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA84,9X15,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum standby current	0.005 A
Maximum slew rate	0.32 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
width	8 mm

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