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Bulletin I2066/B
SD303C..C SERIES
FAST RECOVERY DIODES
Features
High power FAST recovery diode series
1.0 to 2.0 µs recovery time
High voltage ratings up to 2500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Case style conform to JEDEC DO-200AA
Maximum junction temperature 125°C
Hockey Puk Version
350A
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
case style DO-200AA
Major Ratings and Characteristics
Parameters
I
F(AV)
@ T
hs
I
F(RMS)
@ T
hs
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
range
t
rr
range
@ T
J
T
J
SD303C..C
350
55
550
25
5770
6040
166
152
400 to 2500
1.0 to 2.0
25
- 40 to 125
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
µs
°C
°C
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SD303C..C Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
04
SD303C..S10C
08
10
12
SD303C..S15C
14
16
SD303C..S20C
20
25
V
RRM
max. repetitive
peak and off-state voltage
V
400
800
1000
1200
1400
1600
2000
2500
V
RSM
, maximum non-
repetitive peak voltage
V
500
900
1100
1300
1500
1700
2100
2600
I
RRM
max.
T
J
= 125°C
mA
35
12
Forward Conduction
Parameter
I
F(AV)
Max. average forward current
@ Heatsink temperature
I
F(RMS)
Max. RMS current
I
FSM
Max. peak, one-cycle
non-repetitive forward current
SD303C..C
350(175)
55(75)
550
5770
6040
4850
5080
Units
A
°C
A
Conditions
180° conduction, half sine wave.
Double side (single side) cooled
@ 25°C heatsink temperature double side cooled
t = 10ms
t = 8.3ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
A
t = 10ms
t = 8.3ms
t = 10ms
I
2
t
Maximum I
2
t for fusing
166
152
117
107
KA
2
s
t = 8.3ms
t = 10ms
t = 8.3ms
I
2
√t
Maximum I
2
√t
for fusing
1660
1.14
1.63
1.14
KA
2
√s
V
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
(I >
π
x I
F(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
(I >
π
x I
F(AV)
), T
J
= T
J
max.
pk
p
V
F(TO)1
Low level of threshold voltage
V
F(TO)
2
High level of threshold voltage
r
f1
r
f2
V
FM
Low level of forward slope resistance
High level of forward slope resistance
Max. forward voltage
mΩ
0.77
2.26
V
2222222222222
I = 1100A, T
J
= 25°C, t = 10ms sinusoidal wave
Recovery Characteristics
Code
T
J
= 25
o
C
typical t
(µs)
rr
Test conditions
I
pk
Max. values @ T
J
= 125 °C
V
r
di/dt
(A/µs)
t
rr
Q
rr
I
rr
@ 25% I
RRM
Square Pulse
(A)
(V)
@ 25% I
RRM
(µs)
2.4
(µC)
52
90
107
(A)
33
44
46
S10
S15
S20
1.0
1.5
2.0
750
25
-30
2.9
3.2
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SD303C..C Series
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
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SD303C..C Series
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristic
Fig. 11 - Typical Forward Recovery Characteristics
Fig. 12 - Recovery Time Characteristics
Fig. 13 - Recovery Charge Characteristics
Fig. 14 - Recovery Current Characteristics
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SD303C..C Series
Fig. 15 - Recovery Time Characteristics
Fig. 16 - Recovery Charge Characteristics
Fig. 17 - Recovery Current Characteristics
Fig. 18 - Recovery Time Characteristics
Fig. 19 - Recovery Charge Characteristics
Fig. 20 - Recovery Current Characteristics
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
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