2SK2521-01 datasheet, PDF - EEWORLD Datasheet

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2SK2521-01: DescriptionPower Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size119KB，1 Pages; ManufacturerFuji Electric Co., Ltd.

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2SK2521-01 Overview

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

2SK2521-01 Parametric

Parameter Name	Attribute value
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	AVALANCHE RATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	18 A
Maximum drain current (ID)	18 A
Maximum drain-source on-resistance	0.18 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	50 W
Maximum pulsed drain current (IDM)	72 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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MOS-FET, High Voltage Diodes

N-Channel Silicon Power MOS-FET

C o l l m e r

Semiconductor

F-I Series = Low RDS(ON)

F-II Series = VGS ±30 V, Reduced Turn Off Time

FAP-II Series = High Avalanche Ruggedness

F-III Series = Logic Level, High g

FAP-III = Logic Level, High Avalanche Ruggedness

FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V

FAP-IIA = Reduced Turn Off Time

FAP-IIIBH = High Speed Non Logic

FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V

Ratings

Mfr.Õs

Type

2SJ314-01L

2SJ314-01S

2SK2248-01L

2SK2248-01S

2SK2687-01

2SK2893-01

2SK2900-01

2SK2690-01

2SK2906-01

2SK3270-01

2SK3271-01

2SK3216-01

2SK3217-01MR

2SK3218-01

2SK3219-01MR

2SK2521-01

2SK3262-01MR

2SK900

2SK902

2SK1017-01

2SK2021-01

2SK2642-01MR

2SK2757-01

2SK725

2SK1941-01R

2SK2646-01

2SK956-01

2SK2648-01

2SK2654-01

2SK2082-01

2SK1986-01

2SK2258-01

Series

FAP-III

FAP-IIIB

FAP-IIIBH

FAP-III

FAP-IIIBH

Trench

FAP-IIIBH

FAP-II

FAP-IIIB

F-I

F-II

FAP-IIA

FAP-IIS

F-I

FAP-IIA

FAP-II

FAP-IIS

FAP-IIA

FAP-II

DSS

(V)

Ð60

100

150

200

250

450

500

600

800

900

1000

(A)

Ð5.0

35.0

50.0

100.0

45.0

80.0

100.0

80.0

100.0

45.0

50.0

35.0

40.0

18.0

20.0

12.0

30.0

20.0

5.0

15.0

10.0

15.0

16.0

4.0

9.0

8.0

9.0

4.0

(W)

150

125

150

135

155

150

125

100

150

100

DS(ON)

VGS=4V

0.480

0.037

0.017

0.007

0.017

0.15

(½) (Max.)

VGS=10V

0.300

0.022

0.010

0.004

0.140

0.010

0.007

0.006

0.026

0.025

0.048

0.043

0.180

0.100

0.300

0.100

0.350

1.600

0.550

0.900

0.380

0.550

4.000

1.500

2.000

1.400

3.600

Characteristics

iss

(pf)

750

2630

4130

9900

3450

5250

8100

9000

4800

3900

3980

1650

2550

1800

3900

3300

1500

2100

950

4000

4950

450

2100

1200

3300

1950

oss

(pf)

300

1200

1950

4950

1370

1870

3150

1250

1140

800

830

330

435

300

900

480

130

380

180

500

470

300

180

320

150

(ns)

188

103

260

110

143

400

250

186

230

158

174

150

200

375

220

130

165

425

130

off

(ns)

270

720

520

1270

200

450

470

285

240

265

270

263

150

520

260

1000

740

100

230

440

420

690

320

160

Package

K-PACK L

K-PACK S

K-PACK L

K-PACK S

TO220

TO3P

TO220

TO3P

TO-220

TO3P

TO220

TO-220F15

TO220

TO-220F15

TO220

TO-220F15

TO220

TO3P

TO220

TO220F15

TO220

TO3P

TO3PF

TO220

TO3P

TO220

TO3P

Fast Recovery High Voltage Silicon Rectifiers

Mfr.Õs

Type

ESJC30-08

CS57-04A

CS54-08A

CS52-12A

CS52-14A

CS56-24

Repetitive

Peak Reverse

Voltage

RRM

Average

Forward

Current

300

Non-Repetitive

Peak Surge

Current

FSM

15.0

1.0

0.5

Maximum Forward

Voltage Drop

(at 1 mA, T

= 25¡C)

Volts

16.0

15.0

30.0

45.0

51.0

75.0

Maximum Reverse

Current Repetitive

(at VRRM, T

= 25¡C)

RRM

µA

Maximum Junction

Capacitance

(at VRRM = 0V, T

= 25¡C)

@ 1 MHz

Notes:

*Single phase; half sine wave in oil bath or filled epoxy at ambient temperature 25¡C. **

cycle, 60 Hz at full load.

Reverse Recovery Time:

ÒAÓ Type Ñ 80 nsec max. @ T

= 25¡C, I

= 2 mA, I

= 1 mA; Non ÒAÓ Type Ñ 100 nsec max. @ T

25¡C, I

= 2 mA, I

= 1 mA.

Storage and Operating Junction Temperature, T

Ð65¡C to +150¡C.

Packaging:

Bulk or tape and reel available (please specify).

Same Day Shipments For Product In Stock

ALLIED

803

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