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ALF16N20K

Description
Power Field-Effect Transistor, 16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, METAL PACKAGE-2
CategoryDiscrete semiconductor    The transistor   
File Size721KB,4 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
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ALF16N20K Overview

Power Field-Effect Transistor, 16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, METAL PACKAGE-2

ALF16N20K Parametric

Parameter NameAttribute value
MakerTT Electronics plc
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH VOLTAGE
Shell connectionSOURCE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)16 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

ALF16N20K Related Products

ALF16N20K ALF16N16K
Description Power Field-Effect Transistor, 16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, METAL PACKAGE-2 Power Field-Effect Transistor, 16A I(D), 160V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, METAL PACKAGE-2
Maker TT Electronics plc TT Electronics plc
package instruction FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features HIGH VOLTAGE HIGH VOLTAGE
Shell connection SOURCE SOURCE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 160 V
Maximum drain current (ID) 16 A 16 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-3 TO-3
JESD-30 code O-MBFM-P2 O-MBFM-P2
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material METAL METAL
Package shape ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON

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