Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | compli |
| Other features | LOW CONDUCTION LOSS |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 27 A |
| Collector-emitter maximum voltage | 600 V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Maximum landing time (tf) | 175 ns |
| Gate emitter threshold voltage maximum | 6 V |
| Gate-emitter maximum voltage | 20 V |
| JEDEC-95 code | TO-263AB |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 104 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | MOTOR CONTROL |
| Transistor component materials | SILICON |
| Nominal off time (toff) | 392 ns |
| Nominal on time (ton) | 45 ns |
| Base Number Matches | 1 |
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