UNISONIC TECHNOLOGIES CO., LTD
2SA1774
GENERAL PURPOSE
TRANSISTOR
FEATURES
PNP EPITAXIAL SILICON TRANSISTOR
* Excellent h
FE
linearity
* Complements the UTC
2SC4617
ORDERING INFORMATION
Ordering Number
Package
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
Lead Free
Halogen Free
2SA1774L-x-AE3-R
2SA1774G-x-AE3-R
SOT-23
2SA1774L-x-AN3-R
2SA1774G-x-AN3-R
SOT-523
2SA1774L-x-AQ3-R
2SA1774G-x-AQ3-R
SOT-723
Note: Pin Assignment: E: EMITTER
B: BASE C: COLLECTOR
MARKING
L:Lead Free
G:Halogen Free
A5
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 3
QW-R221-011.D
2SA1774
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°С, unless otherwise specified)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATINGS
UNIT
-60
V
-50
V
-6
V
-0.15
A
SOT-23
0.22
Collector Power Dissipation
SOT-523
P
C
0.15
W
SOT-723
0.125
Junction Temperature
T
J
150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°С ~70°С operating temperature range
and assured by design from –20°С ~85°С.
ELECTRICAL CHARACTERISTICS
(T
A
=25°С, unless otherwise specified.)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE (SAT)
f
T
C
OB
TEST CONDITIONS
I
C
= -50µA
I
C
= -1mA
I
E
= -50µA
V
CB
= -60V
V
EB
= -6V
V
CE
= -6V, I
C
= -1mA
I
C
=-50mA, I
B
=−5mA
V
CE
= -12V, I
E
=2mA, f=100MHz
V
CB
= -12V, I
E
=0A, f=1MHz
MIN
-60
-50
-6
TYP
MAX
UNIT
V
V
V
µA
µA
V
MHz
pF
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
120
140
4.0
-0.1
-0.1
560
-0.5
5.0
CLASSIFICATION OF h
FE1
RANK
Range
Q
120 ~ 270
R
180 ~ 390
S
270 ~ 560
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R221-011.D
2SA1774
TYPICAL CHARACTERISTICS
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector-Emitter Saturation Voltage,
V
CE(SAT)
(V)
h
FE
,DC Current Gain
3 of 3
QW-R221-011.D
京公网安备 11010802033920号
EEWORLD
