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TLP280-4(LF1,F)

Description
Optocoupler - Transistor Output, 4 CHANNEL AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER
CategoryLED optoelectronic/LED    photoelectric   
File Size198KB,9 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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TLP280-4(LF1,F) Overview

Optocoupler - Transistor Output, 4 CHANNEL AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER

TLP280-4(LF1,F) Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min80 V
ConfigurationSEPARATE, 4 CHANNELS
Nominal current transfer ratio50%
Maximum dark power100 nA
Maximum forward current0.05 A
Maximum insulation voltage2500 V
Number of components4
Maximum operating temperature100 °C
Minimum operating temperature-55 °C
Optoelectronic device typesAC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER

TLP280-4(LF1,F) Preview

TLP280,TLP280−4
TOSHIBA Photocoupler
GaAs Ired & Photo−Transistor
TLP280,TLP280−4
Programmable Controllers
AC/DC−Input Module
PC Card Modem (PCMCIA)
TLP280 and TLP280−4 is a very small and thin coupler, suitable for
surface mount assembly in applications such as PCMCIA fax modem,
programmable controllers.
TLP280 and TLP280−4 consist of photo transistor, optically coupled to
two gallium arsenide infrared emitting diode connected inverse parallel,
and can operate directly by AC input current
Collector−emitter voltage: 80 V (min)
Current transfer ratio: 50% (min)
Rank GB: 100% (min)
Isolation voltage: 2500 Vrms (min)
UL recognized: UL1577, file No. E67349
BSI approved: BS EN 60065: 2002,
BS EN 60950-1: 2002
Certificate No. 8143, 8144
TOSHIBA
Weight: 0.05 g (typ.)
Unit in mm
TOSHIBA
Weight: 0.19 g (typ.)
1
2007-10-01
TLP280,TLP280−4
Pin Configuration
(top view)
TLP280
1
2
4
3
1
2
3
4
5
6
7
8
TLP280-4
16
15
14
13
12
11
10
9
1 : Anode
Cathode
2 : Cathode
Anode
3 : Emitter
4 : Collector
1,3,5,7
: Anode-
Cathode
2,4,6,8
: Cathode
Anode
9,11,13,15 : Emitter
10,12,14,16 : Collector
2
2007-10-01
TLP280,TLP280−4
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
LED
Forward current derating
Pulse forward current
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Detector
Collector current
Collector power dissipation
(1 circuit)
Collector power dissipation
derating (Ta
25°C) (1 circuit)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation
(1 circuit)
Total package power dissipation
derating (Ta
25°C) (1 circuit)
Isolation voltage
(Note)
Symbol
I
F(RMS)
ΔI
F
/°C
I
FP
T
j
V
CEO
V
ECO
I
C
P
C
ΔP
C
/°C
T
j
T
stg
T
opr
T
sol
P
T
ΔP
T
/°C
BV
S
200
−2.0
150
−1.5
125
−55~125
−55~100
260 (10s)
170
−1.7
Rating
TLP280
±50
−0.7
(Ta
53°C)
−0.5
(Ta
25°C)
TLP280−4
Unit
mA
mA /°C
A
°C
V
V
mA
100
−1.0
mW
mW /°C
°C
°C
°C
°C
mW
mW /°C
Vrms
±1 (100μs pulse, 100pps)
125
80
7
50
2500 (AC, 1min., R.H.≤ 60%)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note):
Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.
3
2007-10-01
TLP280,TLP280−4
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
LED
Forward voltage
Capacitance
Collector−emitter
breakdown voltage
Emitter−collector
breakdown voltage
Detector
Symbol
V
F
C
T
V
(BR) CEO
V
(BR) ECO
Test Condition
I
F
= ±10 mA
V = 0, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 48 V,
Ambient light below
(100 1x)
V
CE
= 48 V, Ta = 85°C
Ambient light below
(100 1x)
V = 0, f = 1 MHz
Min
1.0
80
7
Typ
1.15
60
0.01
(2)
2
(4)
10
Max
1.3
0.1
(10)
50
(50)
Unit
V
pF
V
V
μA
μA
pF
Collector dark current
(Note 1)
Capacitance
(collector to emitter)
I
CEO
C
CE
(Note 1): Because of the construction, leak current might be increased by ambient light. Please use photocoupler
with less ambient light.
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Symbol
I
C
/ I
F
Test Condition
I
F
= ±5 mA, V
CE
= 5 V
Rank GB
IF = ±1 mA, V
CE
= 0.4 V
Rank GB
I
C
= 2.4 mA, I
F
= ±8 mA
Collector−emitter
saturation voltage
Off−state collector current
CTR symmetry
V
CE (sat)
I
C
= 0.2 mA, I
F
= ±1 mA
Rank GB
V
F
= ± 0.7 V, V
CE
= 48 V
I
C
(I
F
=
−5
mA) / I
C
(I
F
= 5 mA)
(Note 2)
MIn
50
100
30
0.33
Typ.
60
0.2
Max
600
600
0.4
0.4
10
3
μA
V
Unit
%
Saturated CTR
I
C
/ I
F (sat)
%
I
C(off)
I
C (ratio)
(Note 2):
I
C1
I
C2
I
F1
=
5V)
I (I
=
I , V
IC(ratio)
=
C2 F F2 CE
IC1(IF
=
IF1, VCE
=
5V)
V
CE
I
F2
4
2007-10-01
TLP280,TLP280−4
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0V, f = 1 MHz
V
S
= 500 V, R.H.≤ 60%
AC, 1 minute
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
Min
5×10
10
Typ.
0.8
10
14
Max
Unit
pF
V
rms
V
dc
2500
5000
5000
Switching Characteristics
(Ta = 25°C)
Characteristic
Rise time
Fall time
Turn−on time
Turn−off time
Turn−on time
Storage time
Turn−off time
Symbol
t
r
t
f
t
on
t
off
t
ON
t
s
t
OFF
R
L
= 1.9 kΩ
V
CC
= 5 V, I
F
= ±16 mA
(Fig.1)
V
CC
= 10 V, I
C
= 2 mA
R
L
= 100Ω
Test Condition
Min
Typ.
2
3
3
3
2
25
40
Max
μs
μs
Unit
(Fig. 1): Switching time test circuit
I
F
I
F
V
CE
t
ON
R
L
V
CC
V
CE
t
S
V
CC
4.5V
0.5V
t
OFF
5
2007-10-01

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Maker Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min 80 V 80 V 80 V 80 V 80 V 80 V
Configuration SEPARATE, 4 CHANNELS SEPARATE, 4 CHANNELS SEPARATE, 4 CHANNELS SEPARATE, 4 CHANNELS SINGLE SEPARATE, 4 CHANNELS
Nominal current transfer ratio 50% 100% 100% 50% 50% 50%
Maximum dark power 100 nA 100 nA 100 nA 100 nA 100 nA 100 nA
Maximum forward current 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A
Maximum insulation voltage 2500 V 2500 V 2500 V 2500 V 2500 V 2500 V
Number of components 4 4 4 4 1 4
Maximum operating temperature 100 °C 100 °C 100 °C 100 °C 100 °C 100 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Optoelectronic device types AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER

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