TL(OE,YE,PYE,GE,FGE)33CP(F)
TOSHIBA InGaAℓP LED
TL(OE,YE,PYE,GE,FGE)33CP(F)
Unit: mm
Panel Circuit Indicators
•
•
•
•
•
•
•
•
•
•
Lead(Pb)-free products (lead: Sn-Ag-Cu)
φ2.5 ×
5 mm
InGaAℓP technolgy
Colored Transparent lens
Line-up: 6 colors (orange, yellow, pure yellow, green and pure green)
Excellent low current light output
High intensity light emission
Excellent low current light output
Applications: dashboard displays、various indicator
Stopper lead type is also available
Lineup
Product Name
TLOE33CP(F)
TLYE33CP(F)
TLPYE33CP(F)
TLGE33CP(F)
TLFGE33CP(F)
Color
orange
yellow
yellow
green
green
InGaAℓP
Material
JEDEC
JEITA
TOSHIBA
Weight: 0.23 g
⎯
⎯
⎯
1
2005-09-13
TL(OE,YE,PYE,GE,FGE)33CP(F)
Maximum Ratings
(Ta
=
25°C)
Product Name
TLOE33CP(F)
TLYE33CP(F)
TLPYE33CP(F)
TLGE33CP(F)
TLFGE33CP(F)
Forward Current
I
F
(mA)
50
50
50
50
50
Reverse Voltage
V
R
(V)
4
4
4
4
4
Power Dissipation
P
D
(mW)
120
120
120
120
120
−40~100
−40~120
Operating
Temperature
T
opr
(°C)
Storage
Temperature
T
stg
(°C)
Electrical and Optical Characteristics
(Ta
=
25°C)
Product Name
Typ. Emission Wavelength
λ
d
TLOE33CP(F)
TLYE33CP(F)
TLPYE33CP(F)
TLGE33CP(F)
TLFGE33CP(F)
Unit
605
587
580
571
565
λ
P
(612)
(590)
(583)
(574)
(568)
nm
∆λ
20
17
14
17
15
I
F
20
20
20
20
20
mA
Luminous Intensity
I
V
Min
1530
1530
476
272
153
mcd
Typ.
4000
3500
1400
800
400
I
F
20
20
20
20
20
mA
Forward Voltage
V
F
Typ.
2.0
2.0
2.0
2.0
2.0
V
Max
2.4
2.4
2.4
2.4
2.4
I
F
20
20
20
20
20
mA
Reverse Current
I
R
Max
50
50
50
50
50
µA
V
R
4
4
4
4
4
V
Precautions
Please be careful of the following:
•
Soldering temperature: 260°C max, soldering time: 3 s max
(soldering portion of lead: up to 1.6 mm from the body of the device)
•
•
If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress
to the resin. Soldering should be performed after lead forming.
This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
2
2005-09-13
TL(OE,YE,PYE,GE,FGE)33CP(F)
TLOE33CP(F)
I
F
– V
F
100
50
30
Ta
=
25°C
I
V
– I
F
I
F
(mA)
10
5
3
1
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
Forward voltage V
F
(V)
Luminous intensity I
V
Forward current
(mcd)
Forward voltage V
F
(V)
I
V
– Tc
3
1.0
Relative luminous intensity – Wavelength
IF
=
20 mA
Ta
=
25°C
Relative luminous intensity I
V
Relative luminous intensity
0.8
1
0.6
0.5
0.3
0.4
0.2
0.1
−20
0
20
40
60
80
0
540
560
580
600
620
640
660
Case temperature
Tc
(°C)
Wavelength
λ
(nm)
Radiation pattern
80
I
F
– Ta
(mA)
Allowable forward current I
F
60
40
20
0
0
20
40
60
80
100
120
Ambient temperature
Ta
(°C)
3
2005-09-13
TL(OE,YE,PYE,GE,FGE)33CP(F)
TLYE33CP(F)
I
F
– V
F
100
50
30
Ta
=
25°C
I
V
– I
F
I
F
(mA)
10
5
3
1
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
Luminous intensity I
V
Forward current
(mcd)
Forward voltage V
F
(V)
Forward voltage V
F
(V)
I
V
– Tc
10
Relative luminous intensity – Wavelength
Relative luminous intensity I
V
3
1
0.5
0.3
0.1
−20
0
20
40
60
80
Relative luminous intensity
5
Case temperature
Tc
(°C)
Wavelength
λ
(nm)
Radiation pattern
(mA)
I
F
– Ta
80
Allowable forward current I
F
60
40
20
0
0
20
40
60
80
100
120
Ambient temperature
Ta
(°C)
4
2005-09-13
TL(OE,YE,PYE,GE,FGE)33CP(F)
TLPYE33CP(F)
100
Ta
=
25°C
50
30
I
F
– V
F
I
V
– I
F
10000
Ta
=
25°C
I
F
(mA)
(mcd)
1000
10
Luminous intensity I
V
Forward current
5
3
100
1
1.6
10
1.7
1.8
1.9
2.0
2.1
2.2
2.3
1
3
5
10
30
50
100
Forward voltage V
F
(V)
Forward voltage V
F
(V)
I
V
– Tc
10
Relative luminous intensity – Wavelength
Relative luminous intensity I
V
5
3
1
0.5
0.3
0
−20
0
20
40
60
80
Relative luminous intensity
Case temperature
Tc
(°C)
Wavelength
λ
(nm)
Radiation pattern
80
I
F
– Ta
(mA)
Allowable forward current I
F
60
40
20
0
0
20
40
60
80
100
120
Ambient temperature
Ta
(°C)
5
2005-09-13