PD-94323D
RAD-HARD
SYNCHRONOUS RECTIFIER
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level R
DS(on)
Q
G
IRHSNA57064 100K Rads (Si) 6.5mΩ 160nC
IRHSNA53064 300K Rads (Si) 6.5mΩ 160nC
IRHSNA54064
600K Rads (Si)
6.5mΩ 160nC
6.5mΩ 160nC
SMD-2
IRHSNA58064 1000K Rads (Si)
IRHSNA57064
60V, N-CHANNEL
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. RAD-Hard MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of Military and
Space applications.
Features:
n
Co-Pack N-channel RAD-Hard MOSFET
n
n
n
n
n
and Schottky Diode
Ideal for Synchronous Rectifiers in DC-DC
Converters up to 56A Output
Low Conduction Losses
Low Switching Losses
Low Vf Schottky Rectifier
Refer to IRHSLNA57064 for Lower Inductance
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain or Source Current
ID @ VGS = 12V, TC = 100°C Continuous Drain or Source Current
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
IF (AV)@ TC = 25°C
IF (AV)@ TC =100°C
TJ, TSTG
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Ã
Avalanche Current
À
Repetitive Avalanche Energy
À
Schottky and Body Diode Avg. Forward Current
Â
Schottky and Body Diode Avg. Forward Current
Â
Opeating and Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
Pre-Irradiation
Units
56*
56*
224
250
2.0
±20
309
56
25
56*
56*
-55 to 125
300 (for 5s)
3.3 (Typical)
A
W
W/°C
V
mJ
A
mJ
A
°C
g
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1
12/18/07
IRHSNA57064
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
RDS(on)
VGS(th)
g fs
IDSS
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
60
—
2.0
45
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
—
—
—
—
—
—
6.5
4.0
—
50
50
V
mΩ
V
S
µA
mA
nA
nC
Test Conditions
VGS = 0V, ID = 1.0mA
VGS = 12V, ID = 45A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 45A
VDS = 48V, VGS=0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 45A,
VDS = 30V
VDD = 30V, ID = 45A,
VGS =12V, RG = 2.35Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
100
— -100
—
160
—
55
—
65
—
35
—
125
—
75
—
50
7.03
—
ns
nH
Measured from center of drain
pad to center of source pad
Schottky Diode & Body Diode Ratings and Characteristics
Parameter
VSD
Diode Forward Voltage
Min Typ Max Units
—
—
—
—
—
—
—
0.93
—
0.90
—
0.82
—
100
—
210
8.09 —
Test Conditions
TJ = -55°C, ID= 45A, VGS = 0V
TJ = 25°C, ID= 45A, VGS = 0V
T J = 125°C, ID= 45A, VGS = 0V
Tj = 25°C, IF = 45A, di/dt
≤
100A/µs
VDS
≤
30V
Measured from center of drain pad to
center of source pad (for Schottky only)
V
ns
nC
nH
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
LS + LD Total Inductance
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD
Thermal Resistance
Parameter
RthJC
RthJC
Junction-to-Case (MOSFET)
Junction-to-Case (Schottky)
Min Typ Max
—
—
—
—
0.5
0.7
Units
°C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHSNA57064
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test condi-
tions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
Á
On-State Resistance (TO-3)
Diode Forward Voltage
Á
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
= 48V, V
GS
=0V
V
GS
= 12V, I
D
= 45A
V
GS
= 0V, IS = 45A
Min
60
2.0
—
—
—
—
—
Max
—
4.0
100
-100
10
6.1
1.3
Min
60
1.5
—
—
—
—
—
Max
—
4.0
100
-100
25
7.1
1.3
V
nA
µA
mΩ
V
1. Part numbers IRHSNA57064, IRHSNA53064 and IRHSNA54064
2. Part number IRHSNA58064
International Rectifier Radiation Hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
Kr
Xe
Au
LET
(MeV/(mg/cm
2
))
39.2
63.3
86.6
Energy
(MeV)
300
300
2068
V
DS
(V)
Range
(µm)
@V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
37.4
60
60
60
52
34
29.2
46
46
35
25
15
106
35
35
27
20
14
70
60
50
40
30
20
10
0
0
-5
-10
VGS
Kr
Xe
Au
VDS
-15
-20
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHSNA57064
Pre-Irradiation
1000
TOP
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
1000
TOP
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
BOTTOM
BOTTOM
10
5.0V
1
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
5.0V
10
20µs PULSE WIDTH
Tj = 125°C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
T J = 125°C
100
T J = 25°C
10
VDS = 25V
20µs PULSE WIDTH
1
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 56A
1.5
ID, Drain-to-Source Current (A)
1.0
0.5
VGS = 12V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHSNA57064
20
I
D
= 45A
V
DS
= 48V
V
DS
= 30V
V
DS
= 12V
V
GS
, Gate-to-Source Voltage (V)
16
12
8
4
0
FOR TEST CIRCUIT
SEE FIGURE
5b
13
0
50
100
150
200
250
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
12V
.2µF
.3µF
12 V
Q
GS
Q
GD
V
GS
3mA
D.U.T.
+
V
-
DS
V
G
Charge
I
G
I
D
Current Sampling Resistors
Fig 5a.
Basic Gate Charge Waveform
Fig 5b.
Gate Charge Test Circuit
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