Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 Pin,
| Parameter Name | Attribute value |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 5 A |
| Collector-emitter maximum voltage | 80 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 40 |
| JEDEC-95 code | TO-111 |
| JESD-30 code | O-MUPM-D4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 175 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | POST/STUD MOUNT |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 30 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | SOLDER LUG |
| Terminal location | UPPER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 60 MHz |
| VCEsat-Max | 0.25 V |
| Base Number Matches | 1 |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD
