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BLM7G1822S-40AB_15

Description
LDMOS 2-stage power MMIC
File Size288KB,19 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLM7G1822S-40AB_15 Overview

LDMOS 2-stage power MMIC

BLM7G1822S-40AB;
BLM7G1822S-40ABG
LDMOS 2-stage power MMIC
Rev. 1 — 10 July 2015
Product data sheet
1. Product profile
1.1 General description
The BLM7G1822S-40AB(G) is a dual section, asymmetric, 2-stage power MMIC using
NXP’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited
as small cell final in Doherty configuration, or as general purpose driver in the 1805 MHz
to 2170 MHz frequency range. Available in gull wing or straight lead outline.
Table 1.
Performance
Typical RF performance at T
case
= 25
C; I
Dq1
= 20 mA; I
Dq2
= 76 mA for carrier section:
I
Dq1
= 40 mA and I
Dq2
= 120 mA for peaking section.
Test signal: 3GPP test model 1; single carrier W-CDMA; 64 DPCH; PAR = 9.9 dB at 0.01%
probability on CCDF; per section in a class-AB production circuit.
Test signal
single carrier W-CDMA
carrier section
peaking section
2167.5
2167.5
28
28
2
4
31.5
31.5
25.5
26.5
37
38
f
(MHz)
V
DS
(V)
P
L(AV)
(W)
G
p
(dB)
D
(%)
ACPR
5M
(dBc)
1.2 Features and benefits
Designed for broadband operation (frequency 1805 MHz to 2170 MHz)
High section-to-section isolation enabling multiple combinations
High Doherty efficiency thanks to 2 : 1 asymmetry
Integrated temperature compensated bias
Biasing of individual stages is externally accessible
Integrated ESD protection
Excellent thermal stability
High power gain
On-chip matching for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
RF power MMIC for W-CDMA base stations in the 1805 MHz to 2170 MHz frequency
range. Possible circuit topologies are the following as also depicted in
Section 8.1:
Asymmetric final stage in Doherty configuration
Asymmetric driver for high power Doherty amplifier

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