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GS8182Q18GD-250T

Description
Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, BGA-165
Categorystorage    storage   
File Size450KB,29 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Environmental Compliance
Download Datasheet Parametric View All

GS8182Q18GD-250T Overview

Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, BGA-165

GS8182Q18GD-250T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGSI Technology
Parts packaging codeBGA
package instructionBGA,
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Maximum access time0.45 ns
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B165
JESD-609 codee1
memory density18874368 bit
Memory IC TypeSTANDARD SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of terminals165
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX18
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Preliminary
GS8182Q18/36D-250/200/167/133
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Simultaneous Read and Write SigmaQuad™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 2 Read and Write
• 1.8 V +150/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ mode pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
• Pin-compatible with future 36Mb, 72Mb, and 144Mb devices
18Mb
Σ
2x2B2
SigmaQuad-II SRAM
133 MHz – 250 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
Bottom View
-250
tKHKH
tKHQV
4.0 ns
0.45 ns
-200
5.0 ns
0.45 ns
-167
6.7 ns
0.5 ns
-133
7.5 ns
0.5 ns
165-Bump, 13 mm x 15 mm BGA
1 mm Bump Pitch, 11 x 15 Bump Array
JEDEC Std. MO-216, Variation CAB-1
Because Separate I/O
Σ
2x2B2 RAMs always transfer data in two
packets, A0 is internally set to 0 for the first read or write transfer, and
automatically incremented by 1 for the next transfer. Because the LSB
is tied off internally, the address field of a
Σ
2x2B2 RAM is always one
address pin less than the advertised index depth (e.g., the 1M x 18
has a 512K addressable index).
SigmaRAM™ Family Overview
GS8182Q18/36 are built in compliance with the SigmaQuad-II
SRAM pinout standard for Separate I/O synchronous SRAMs. They
are 18,874,368-bit (18Mb) SRAMs. These are the first in a family of
wide, very low voltage HSTL I/O SRAMs designed to operate at the
speeds needed to implement economical high performance
networking systems.
two input register clock inputs, K and K. K and K are independent
single-ended clock inputs, not differential inputs to a single differential
clock input buffer. The device also allows the user to manipulate the
output register clock inputs quasi independently with the C and C
clock inputs. C and C are also independent single-ended clock inputs,
not differential inputs. If the C clocks are tied high, the K clocks are
routed internally to fire the output registers instead.
Clocking and Addressing Schemes
A
Σ
2x2B2 SigmaQuad-II SRAM is a synchronous device. It employs
Rev: 1.01a 8/2003
1/29
© 2003, Giga Semiconductor, Inc.
Specifications cited are design targets and are subject to change without notice. For latest documentation contact your GSI representative.
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