MGFC4419G-A12 datasheet, PDF - EEWORLD Datasheet

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MGFC4419G-A12: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3; CategoryDiscrete semiconductor The transistor; File Size255KB，6 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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MGFC4419G-A12 Overview

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3

MGFC4419G-A12 Parametric

Parameter Name	Attribute value
Maker	Mitsubishi
Parts packaging code	DIE
package instruction	UNCASED CHIP, R-XUUC-N3
Contacts	3
Reach Compliance Code	unknown
Configuration	SINGLE
Maximum drain current (Abs) (ID)	0.06 A
Maximum drain current (ID)	0.06 A
FET technology	HIGH ELECTRON MOBILITY
highest frequency band	K BAND
JESD-30 code	R-XUUC-N3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	125 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	0.05 W
Minimum power gain (Gp)	12 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE

MGFC4419G-A12 Related Products

	MGFC4419G-A12	MGFC4419G-A11	MGFC4419G-A03	MGFC4419G-A13	MGFC4419G-A02
Description	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
Maker	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi
Parts packaging code	DIE	DIE	DIE	DIE	DIE
package instruction	UNCASED CHIP, R-XUUC-N3	UNCASED CHIP, R-XUUC-N3	UNCASED CHIP, R-XUUC-N3	UNCASED CHIP, R-XUUC-N3	UNCASED CHIP, R-XUUC-N3
Contacts	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum drain current (Abs) (ID)	0.06 A	0.06 A	0.06 A	0.06 A	0.06 A
Maximum drain current (ID)	0.06 A	0.06 A	0.06 A	0.06 A	0.06 A
FET technology	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY
highest frequency band	K BAND	K BAND	K BAND	K BAND	K BAND
JESD-30 code	R-XUUC-N3	R-XUUC-N3	R-XUUC-N3	R-XUUC-N3	R-XUUC-N3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	0.05 W	0.05 W	0.05 W	0.05 W	0.05 W
Minimum power gain (Gp)	12 dB	12 dB	12 dB	12 dB	12 dB
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE

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