DDR DRAM, 256MX16, 0.125ns, CMOS, PBGA96, 9 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-96
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Integrated Silicon Solution ( ISSI ) |
package instruction | TFBGA, BGA96,9X16,32 |
Reach Compliance Code | compliant |
Factory Lead Time | 8 weeks |
access mode | MULTI BANK PAGE BURST |
Maximum access time | 0.125 ns |
Other features | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 667 MHz |
I/O type | COMMON |
interleaved burst length | 4,8 |
JESD-30 code | R-PBGA-B96 |
length | 13 mm |
memory density | 4294967296 bit |
Memory IC Type | DDR DRAM |
memory width | 16 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 96 |
word count | 268435456 words |
character code | 256000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 105 °C |
Minimum operating temperature | -40 °C |
organize | 256MX16 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | TFBGA |
Encapsulate equivalent code | BGA96,9X16,32 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, THIN PROFILE, FINE PITCH |
power supply | 1.35 V |
Certification status | Not Qualified |
refresh cycle | 8192 |
Filter level | AEC-Q100 |
Maximum seat height | 1.2 mm |
self refresh | YES |
Continuous burst length | 4,8 |
Maximum standby current | 0.016 A |
Maximum slew rate | 0.207 mA |
Maximum supply voltage (Vsup) | 1.45 V |
Minimum supply voltage (Vsup) | 1.283 V |
Nominal supply voltage (Vsup) | 1.35 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |
width | 9 mm |
IS46TR16256AL-15HBLA2 | IS43TR16256A-125KBLI | IS43TR16256A-15HBLI | IS43TR16256AL-125KBLI | IS43TR16256AL-125KBL | IS46TR16256A-125KBLA2 | IS43TR16256A-15HBL | IS43TR16256AL-15HBLI | IS43TR85120AL-15HBL | |
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Description | DDR DRAM, 256MX16, 0.125ns, CMOS, PBGA96, 9 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-96 | DDR DRAM, 256MX16, 0.1ns, CMOS, PBGA96, FBGA-96 | DDR DRAM, 256MX16, 0.125ns, CMOS, PBGA96, FBGA-96 | DDR DRAM, 256MX16, 0.1ns, CMOS, PBGA96, 9 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-96 | DDR DRAM, 256MX16, 0.1ns, CMOS, PBGA96, 9 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-96 | DDR DRAM, 256MX16, 0.1ns, CMOS, PBGA96, FBGA-96 | DDR DRAM, 256MX16, 0.125ns, CMOS, PBGA96, FBGA-96 | DDR DRAM, 256MX16, 0.125ns, CMOS, PBGA96, 9 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-96 | DDR DRAM, 512MX8, 0.255ns, CMOS, PBGA78, 9 X 10.50 MM, 0.80 MM PITCH, LEAD FREE, FBGA-78 |
package instruction | TFBGA, BGA96,9X16,32 | TFBGA, | TFBGA, | TFBGA, | TFBGA, | TFBGA, BGA96,9X16,32 | TFBGA, | TFBGA, | TFBGA, |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compli | compli | unknow |
access mode | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST |
Maximum access time | 0.125 ns | 0.1 ns | 0.125 ns | 0.1 ns | 0.1 ns | 0.1 ns | 0.125 ns | 0.125 ns | 0.255 ns |
Other features | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | AUTO/SELF REFRESH |
JESD-30 code | R-PBGA-B96 | R-PBGA-B96 | R-PBGA-B96 | R-PBGA-B96 | R-PBGA-B96 | R-PBGA-B96 | R-PBGA-B96 | R-PBGA-B96 | R-PBGA-B78 |
length | 13 mm | 13 mm | 13 mm | 13 mm | 13 mm | 13 mm | 13 mm | 13 mm | 10.5 mm |
memory density | 4294967296 bit | 4294967296 bit | 4294967296 bit | 4294967296 bit | 4294967296 bit | 4294967296 bit | 4294967296 bi | 4294967296 bi | 4294967296 bi |
Memory IC Type | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
memory width | 16 | 16 | 16 | 16 | 16 | 16 | 16 | 16 | 8 |
Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of ports | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 96 | 96 | 96 | 96 | 96 | 96 | 96 | 96 | 78 |
word count | 268435456 words | 268435456 words | 268435456 words | 268435456 words | 268435456 words | 268435456 words | 268435456 words | 268435456 words | 536870912 words |
character code | 256000000 | 256000000 | 256000000 | 256000000 | 256000000 | 256000000 | 256000000 | 256000000 | 512000000 |
Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
Maximum operating temperature | 105 °C | 85 °C | 85 °C | 85 °C | 85 °C | 105 °C | 85 °C | 85 °C | 85 °C |
Minimum operating temperature | -40 °C | -40 °C | -40 °C | -40 °C | - | -40 °C | - | -40 °C | - |
organize | 256MX16 | 256MX16 | 256MX16 | 256MX16 | 256MX16 | 256MX16 | 256MX16 | 256MX16 | 512MX8 |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
encapsulated code | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
Maximum seat height | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
self refresh | YES | YES | YES | YES | YES | YES | YES | YES | YES |
Maximum supply voltage (Vsup) | 1.45 V | 1.575 V | 1.575 V | 1.45 V | 1.45 V | 1.575 V | 1.575 V | 1.45 V | 1.45 V |
Minimum supply voltage (Vsup) | 1.283 V | 1.425 V | 1.425 V | 1.283 V | 1.283 V | 1.425 V | 1.425 V | 1.283 V | 1.283 V |
Nominal supply voltage (Vsup) | 1.35 V | 1.5 V | 1.5 V | 1.35 V | 1.35 V | 1.5 V | 1.5 V | 1.35 V | 1.35 V |
surface mount | YES | YES | YES | YES | YES | YES | YES | YES | YES |
technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | OTHER | INDUSTRIAL | OTHER | INDUSTRIAL | OTHER |
Terminal form | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
Terminal pitch | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
width | 9 mm | 9 mm | 9 mm | 9 mm | 9 mm | 9 mm | 9 mm | 9 mm | 9 mm |
Is it Rohs certified? | conform to | conform to | conform to | conform to | conform to | conform to | conform to | conform to | - |
Maker | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | - | - | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
Factory Lead Time | 8 weeks | 6 weeks | 6 weeks | - | 6 weeks | 8 weeks | 6 weeks | 6 weeks | 13 weeks 6 days |