CSD22204W datasheet, PDF - EEWORLD Datasheet

CSD22204W: DescriptionCSD22204W 8-V P-Channel NexFET™ Power MOSFET 9-DSBGA; CategoryDiscrete semiconductor The transistor; File Size468KB，12 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/; Environmental Compliance

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CSD22204W 8-V P-Channel NexFET™ Power MOSFET 9-DSBGA

Parameter Name	Attribute value
Brand Name	Texas Instruments
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Texas Instruments
package instruction	1.50 X 1.50 MM, GREEN, DSBGA-9
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	6 weeks
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage	8 V
Maximum drain current (ID)	5 A
Maximum drain-source on-resistance	0.014 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	265 pF
JESD-30 code	S-XBGA-B9
JESD-609 code	e1
Humidity sensitivity level	1
Number of components	1
Number of terminals	9
Operating mode	ENHANCEMENT MODE
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	GRID ARRAY
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	80 A
surface mount	YES
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	CSD22204W	CSD22204WT
Description	CSD22204W 8-V P-Channel NexFET™ Power MOSFET 9-DSBGA	CSD22204W 8-V P-Channel NexFET™ Power MOSFET 9-DSBGA
Brand Name	Texas Instruments	Texas Instruments
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	Texas Instruments	Texas Instruments
package instruction	1.50 X 1.50 MM, GREEN, DSBGA-9	1.50 X 1.50 MM, GREEN, DSBGA-9
Reach Compliance Code	compliant	compliant
Factory Lead Time	6 weeks	6 weeks
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage	8 V	8 V
Maximum drain current (ID)	5 A	5 A
Maximum drain-source on-resistance	0.014 Ω	0.014 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	265 pF	265 pF
JESD-30 code	S-XBGA-B9	S-XBGA-B9
JESD-609 code	e1	e1
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	9	9
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	SQUARE	SQUARE
Package form	GRID ARRAY	GRID ARRAY
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum pulsed drain current (IDM)	80 A	80 A
surface mount	YES	YES
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL	BALL
Terminal location	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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