NTD14N03R
Power MOSFET
14 Amps, 25 Volts
N-Channel DPAK
Features
•
•
•
•
•
Planar HD3e Process for Fast Switching Performance
Low R
DS(on)
to Minimize Conduction Loss
Low C
iss
to Minimize Driver Loss
Low Gate Charge
Optimized for High Side Switching Requirements in
High-Ef ficiency DC-DC Converters
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14 AMPERES, 25 VOLTS
R
DS(on)
= 70.4 mW (Typ)
N-CHANNEL
D
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise specified)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage - Continuous
Thermal Resistance - Junction-to-Case
Total Power Dissipation @ T
A
= 25°C
Drain Current - Continuous @ T
A
= 25°C, Chip
- Continuous @ T
A
= 25°C, Limited by Package
- Single Pulse (tp
≤
10
ms)
Thermal Resistance - Junction-to-Ambient
(Note 1)
Total Power Dissipation @ T
A
= 25°C
Drain Current - Continuous @ T
A
= 25°C
Thermal Resistance - Junction-to-Ambient
(Note 2)
Total Power Dissipation @ T
A
= 25°C
Drain Current - Continuous @ T
A
= 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Symbol
V
DSS
V
GS
R
qJC
P
D
I
D
I
D
I
D
R
qJA
P
D
I
D
R
qJA
P
D
I
D
T
J
, T
stg
T
L
Value
25
±20
6.0
20.8
14
11.4
28
80
1.56
3.1
120
1.04
2.5
-55 to
150
260
Unit
V
dc
V
dc
°C/W
W
A
A
A
°C/W
W
A
°C/W
W
A
°C
°C
1 2
3
DPAK
CASE 369A
STYLE 2
S
G
4
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain
YWW
14
N03R
1
Gate
2
Drain
3
Source
1. When surface mounted to an FR4 board using 1″ pad size,
(Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in
2
).
Y
= Year
WW
= Work Week
14N03R = Specific Device Code
ORDERING INFORMATION
Device
NTD14N03R
NTD14N03RT4
NTD14N03R1
Package
DPAK
DPAK
DPAK
Shipping
75 Units/Rail
2500/Tape & Reel
75 Units/Rail
©
Semiconductor Components Industries, LLC, 2003
1
January, 2003 - Rev. 1
Publication Order Number:
NTD14N03R/D
NTD14N03R
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Characteristics
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250
mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc)
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
Gate-Body Leakage Current
(V
GS
=
±20
Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250
mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain-to-Source On-Resistance (Note 3)
(V
GS
= 4.5 Vdc, I
D
= 5 Adc)
(V
GS
= 10 Vdc, I
D
= 5 Adc)
Forward Transconductance (Note 3)
(V
DS
= 10 Vdc, I
D
= 5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 4)
Turn-On Delay Time
Rise Time
Turn-Of f Delay Time
Fall Time
Gate Charge
(V
GS
= 5 Vdc, I
D
= 5 Adc,
V
DS
= 10 Vdc) (Note 3)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
(I
S
= 5 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 5 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
V
SD
-
-
t
rr
(I
S
= 5 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
t
a
t
b
Q
RR
-
-
-
-
0.93
0 93
0.82
6.6
4.75
1.88
0.002
1.2
12
-
-
-
-
-
mC
Vdc
(V
GS
= 10 Vdc, V
DD
= 10 Vdc,
I
D
= 5 Adc, R
G
= 3
W)
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
-
-
-
-
-
-
-
3.8
27
9.6
2.0
1.8
0.8
0.7
-
-
-
-
-
-
-
nC
ns
(
(V
DS
= 20 Vdc, V
GS
= 0 V, f = 1 MHz)
,
,
)
C
iss
C
oss
C
rss
-
-
-
115
62
33
-
-
-
pF
V
GS(th)
1.0
-
R
DS(on)
-
-
g
FS
-
7.0
-
117
70.4
130
95
Mhos
1.5
-
2.0
-
Vdc
mV/°C
mW
V(br)
DSS
25
-
I
DSS
-
-
I
GSS
-
-
-
-
1.0
10
±100
nAdc
28
-
-
-
Vdc
mV/°C
mAdc
Symbol
Min
Typ
Max
Unit
Reverse Recovery Time
ns
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2
NTD14N03R
14
I
D
, DRAIN CURRENT (AMPS)
12
10
8
6
4
3V
2
V
GS
= 2.5 V
0
0
2
4
6
8
10
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0
0
1
2
3
4
5
6
V
GS
, GATE-T O-SOURCE VOLTAGE (VOLTS)
10 V
8V
7V
6V
14
5V
I
D
, DRAIN CURRENT (AMPS)
12
10
8
6
T
J
= 25°C
4
2
T
J
= 125°C
T
J
= -55°C
V
DS
≥
10 V
4.5 V
4V
3.5 V
Figure 1. On-Region Characteristics
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (Ω)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (Ω)
Figure 2. Transfer Characteristics
0.20
V
GS
= 10 V
0.16
0.20
T
J
= 125°C
0.16
T
J
= 25°C
0.12
T
J
= 125°C
T
J
= 25°C
T
J
= -55°C
0.12
0.08
0.08
T
J
= -55°C
0.04
0
0
2
4
6
8
10
12
14
I
D
, DRAIN CURRENT (AMPS)
0.04
V
GS
= 4.5 V
0
0
2
4
6
8
10
12
14
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance versus Drain Current
and Temperature
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
1.8
1.6
1.4
1.2
1
0.8
0.6
-50
10
-25
0
25
50
75
100
125
150
0
I
D
= 5 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
Figure 4. On-Resistance versus Drain Current
and Temperature
V
GS
= 0 V
T
J
= 150°C
100
T
J
= 125°C
5
10
15
20
25
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
versus Voltage
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3
NTD14N03R
V
GS
, GATE-T O-SOURCE VOLTAGE (VOLTS)
200
V
DS
= 0 V V
GS
= 0 V
C, CAPACITANCE (pF)
160
C
iss
C
rss
120
T
J
= 25°C
8
6
Q
T
4
Q
1
Q
2
V
GS
C
iss
80
C
oss
C
rss
40
0
10
5
V
GS
0 V
DS
5
10
15
2
I
D
= 5 A
T
J
= 25°C
0
0
0.4
0.8
1.2
1.6
2.0
Q
g
, TOTAL GATE CHARGE (nC)
20
GATE-T O-SOURCE OR DRAIN-TO-SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source and
Drain-to-Source Voltage versus Total Charge
100
I
S
, SOURCE CURRENT (AMPS)
V
DS
= 10 V
I
D
= 5 A
V
GS
= 10 V
t
r
t, TIME (ns)
70
V
GS
= 0 V
60
50
40
30
T
J
= 150°C
20
10
0
1
10
R
G
, GATE RESISTANCE (Ω)
100
0
0.2
0.4
0.6
T
J
= 25°C
0.8
1.0
10
t
d(off)
t
d(on)
t
f
1
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
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4
NTD14N03R
PACKAGE DIMENSIONS
DPAK
CASE 369A-13
ISSUE AB
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
INCHES
MIN
MAX
0.235
0.250
0.250
0.265
0.086
0.094
0.027
0.035
0.033
0.040
0.037
0.047
0.180 BSC
0.034
0.040
0.018
0.023
0.102
0.114
0.090 BSC
0.175
0.215
0.020
0.050
0.020
−−−
0.030
0.050
0.138
−−−
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.84
1.01
0.94
1.19
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.45
5.46
0.51
1.27
0.51
−−−
0.77
1.27
3.51
−−−
-T-
B
V
R
4
C
E
A
S
1
2
3
Z
U
K
F
L
D
G
2 PL
J
H
0.13 (0.005)
M
T
STYLE 2:
PIN 1.
2.
3.
4.
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5
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