RGP30MT datasheet, PDF - EEWORLD Datasheet

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RGP30MT: DescriptionRectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-27,; CategoryDiscrete semiconductor diode; File Size114KB，2 Pages; ManufacturerRugao Dachang Electronics Co., Ltd.

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RGP30MT Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-27,

RGP30MT Parametric

Parameter Name	Attribute value
Maker	Rugao Dachang Electronics Co., Ltd.
package instruction	O-PALF-W2
Reach Compliance Code	unknown
application	FAST RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JEDEC-95 code	DO-27
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	150 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	1000 V
Maximum reverse current	5 µA
Maximum reverse recovery time	0.25 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

RGP30MT Related Products

	RGP30MT	RGP30A	RGP30B	RGP30D	RGP30M
Description	Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-27,	Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-27	Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-27	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-27	Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-27,
Maker	Rugao Dachang Electronics Co., Ltd.	Rugao Dachang Electronics Co., Ltd.	Rugao Dachang Electronics Co., Ltd.	Rugao Dachang Electronics Co., Ltd.	Rugao Dachang Electronics Co., Ltd.
Reach Compliance Code	unknown	unknow	unknow	unknow	unknow
application	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V
JEDEC-95 code	DO-27	DO-27	DO-27	DO-27	DO-27
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	150 A	150 A	150 A	150 A	150 A
Number of components	1	1	1	1	1
Phase	1	1	1	1	1
Number of terminals	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	3 A	3 A	3 A	3 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	1000 V	50 V	100 V	200 V	1000 V
Maximum reverse current	5 µA	5 µA	5 µA	5 µA	5 µA
Maximum reverse recovery time	0.25 µs	0.15 µs	0.15 µs	0.15 µs	0.3 µs
surface mount	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
package instruction	O-PALF-W2	-	O-PALF-W2	-	O-PALF-W2

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