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ALR015

Description
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN,
CategoryDiscrete semiconductor    The transistor   
File Size17KB,2 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

ALR015 Overview

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN,

ALR015 Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instructionFLANGE MOUNT, R-CDFM-F2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Maximum collector current (IC)1.8 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
highest frequency bandL BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Maximum operating temperature250 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)37.5 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON

ALR015 Preview

ALR015
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI ALR015
is an NPN silicon bipolar
transistor designed for L-Band pulsed radar
applications. It utilizes internal matching
and gold metalization for high reliability and
good VSWR capability.
PACKAGE STYLE .310 2L FLG
4x .062 x 45°
2xB
D
G
H
I
M
J
K
L
R
N
DIM
A
B
C
D
MINIMUM
inches / mm
A
.040 x 45°
C
ØE
F
FEATURES:
1.2 to 1.4 GHz operation
Internal Input/Output Matching Network
P
G
= 8.5 dB at 14.5 W/1400 MHz
Omnigold™
Metalization System
5:1 VSWR capability rated at conditions
P
MAXIMUM
inches / mm
.095 / 2.41
.100 / 2.54
.050 / 1.27
.286 / 7.26
.110 / 2.79
.306 / 7.77
.148 / 3.76
.400 / 10.16
.119 / 3.02
.552 / 14.02
.790 / 20.07
.300 / 7.62
.003 / 0.08
.052 / 1.32
.118 / 3.00
.105 / 2.67
.120 / 3.05
.306 / 7.77
.130 / 3.30
.318 / 8.08
MAXIMUM RATINGS
I
C
V
CC
P
DISS
T
J
T
STG
θ
JC
1.8 A
32 V
37.5 W @ T
C
= 25 °C
-65 °C to +250 °C
-65 °C to +200 °C
4.0 °C/W
E
F
G
H
I
J
K
L
M
N
P
R
.572 / 14.53
.810 / 20.57
.320 / 8.13
.006 / 0.15
.072 / 1.83
.131 / 3.33
.230 / 5.84
ORDER CODE: ASI10511
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
EBO
I
CES
h
FE
I
C
= 15 mA
I
C
= 15 mA
I
E
= 1.5 mA
V
CE
= 28 V
V
CE
= 5.0 V
T
C
= 25 °C
NONETEST
CONDITIONS
R
BE
= 10
V
BE
= 28 V
I
C
= 1.0 A
MINIMUM TYPICAL MAXIMUM
48
48
3.5
1.5
30
300
UNITS
V
V
V
mA
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/2
ALR015
ERROR! REFERENCE SOURCE NOT FOUND.
CHARACTERISTICS
SYMBOL
P
G
η
C
T
C
= 25 °C
NONETEST
CONDITIONS
V
CC
= 28 V
P
IN
= 2.0 W
P
OUT
= 15 W
f = 1.2 to 1.4 GHz
MINIMUM TYPICAL MAXIMUM
8.5
48
UNITS
dB
%
Pulse width = 1000 µsec, Duty Cycle = 10%
IMPEDANCE DATA
FREQ
1.2 GHz
1.3 GHz
1.4 GHz
Z
IN
(Ω)
3.0 + j6.5
3.5 + j7.5
5.0 + j7.0
Z
CL
(Ω)
16 + j3.0
13 + j6.0
11 + j5.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
2/2

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