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MA4E930C

Description
SILICON, ZERO BARRIER SCHOTTKY,K BAND, MIXER DIODE
CategoryDiscrete semiconductor    diode   
File Size108KB,5 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
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MA4E930C Overview

SILICON, ZERO BARRIER SCHOTTKY,K BAND, MIXER DIODE

MA4E930C Parametric

Parameter NameAttribute value
MakerTE Connectivity
package instructionO-XEMW-N2
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandK BAND
JESD-30 codeO-XEMW-N2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formMICROWAVE
Pulse input maximum power0.1 W
Minimum pulse input power0.5 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationEND
Schottky barrier typeZERO BARRIER

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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