TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-11D1B, 3 PIN, FET RF Power
TIM7179-8L Parametric
Parameter Name
Attribute value
Is it lead-free?
Contains lead
Is it Rohs certified?
incompatible
Maker
Toshiba Semiconductor
package instruction
FLANGE MOUNT, R-CDFM-F2
Contacts
3
Reach Compliance Code
unknown
Shell connection
SOURCE
Configuration
SINGLE
Minimum drain-source breakdown voltage
15 V
Maximum drain current (Abs) (ID)
8 A
Maximum drain current (ID)
8 A
FET technology
JUNCTION
highest frequency band
C BAND
JESD-30 code
R-CDFM-F2
Number of components
1
Number of terminals
2
Operating mode
DEPLETION MODE
Maximum operating temperature
175 °C
Package body material
CERAMIC, METAL-SEALED COFIRED
Package shape
RECTANGULAR
Package form
FLANGE MOUNT
Peak Reflow Temperature (Celsius)
240
Polarity/channel type
N-CHANNEL
Maximum power consumption environment
37.5 W
Certification status
Not Qualified
surface mount
YES
Terminal form
FLAT
Terminal location
DUAL
Maximum time at peak reflow temperature
NOT SPECIFIED
transistor applications
AMPLIFIER
Transistor component materials
GALLIUM ARSENIDE
TIM7179-8L Preview
TOSHIBA
MICROWAVE POWER GaAs FET
Low Distortion Internally Matched Power GaAs FETs (C-Band)
Features
• Low intermodulation distortion
- IM
3
= -44 dBc at Po = 28 dBm,
- Single carrier level
• High power
- P
1dB
= 39 dBm at 7.1 GHz to 7.9 GHz
• High gain
- G
1dB
= 5.5 dB at 7.1 GHz to 7.9 GHz
• Broad band internally matched
• Hermetically sealed package
RF Performance Specifications (Ta = 25
°
C)
Characteristics
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation Distortion
Drain Current
Channel-Temperature Rise
Symbol
P
1dB
G
1dB
I
DS1
∆
G
η
add
IM
3
I
DS2
∆
T
ch
V
DS
xI
DS
xR
th
(c-c)
Note 1
A
°
C
–
–
2.3
–
2.8
80
Condition
Unit
dBm
dB
A
dB
%
dBc
Min.
38.0
4.5
–
–
–
-41
Typ.
39.0
5.5
2.3
–
25
-44
Max
–
–
2.8
±
0.6
–
–
TIM7179-8L
V
DS
= 10V
f = 7.1 ~ 7.9 GHz
Electrical Characteristics (Ta = 25
°
C)
Characteristic
Trans-conductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown Voltage
Thermal Resistance
Symbol
gm
V
GSoff
I
DSS
V
GSO
R
th (c-c)
Condition
V
DS
= 3V
I
DS
= 3.0A
V
DS
= 3V
I
DS
= 40mA
V
DS
= 3V
V
GS
= 0V
I
GS
= -120
µ
A
Channel
to case
Unit
mS
V
A
V
°
C/W
Min.
–
-2
–
-5
–
Typ.
1800
-3.5
5.8
–
2.3
Max
–
-5.0
7.5
–
3.5
Note 1: 2 tone Test Pout = 28dBm Single Carrier Level.
The information contained here is subject to change without notice.
The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic
equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equip-
ments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types
of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.
TOSHIBA CORPORATION
MW51000196
1/5
TIM7179-8L
Absolute Maximum Ratings (Ta = 25
°
C)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (T
c
= 25
°
C)
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
DS
P
T
T
ch
T
stg
Unit
V
V
A
W
˚
C
˚
C
Rating
15
-5
8
37.5
175
-65~175
Package Outline (2-11D1B)
Handling Precautions for Packaged Type
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260
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